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Inventor profile of:

Jing Wang

City:

Fishkill, New York

Country:

United States

Published Applications:

7

Last publication date:

2013-01-10

Top Assignees for applications by Jing Wang

The entities that hold a legal rights for patent applications filed by inventor Wang Jing:

  • INTERNATIONAL BUSINESS MACHINES CORPORATION 7 ARMONK, NY United States

Recent patent applications by Wang Jing

Jing Wang from Fishkill, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-01-10
US20130011981A1
Electricity

High performance MOSFET

#2 | 2010-10-21
US20100264469A1
Performing operations; transporting

MOSFET including epitaxial halo region

#3 | 2010-07-29
US20100187641A1
Electricity

High performance MOSFET

#4 | 2009-12-17
US20090309163A1
Electricity

METHOD AND STRUCTURE FOR ENHANCING BOTH NMOSFET AND PMOSFET PERFORMANCE WITH A STRESSED FILM AND DISCONTINUITY EXTENDING TO UNDERLYING LAYER

#5 | 2009-06-18
US20090152646A1
Electricity

Structure and method for manufacturing device with planar halo profile

#6 | 2009-05-21
US20090127626A1
Electricity

Stress-generating shallow trench isolation structure having dual composition

#7 | 2009-04-09
US20090090979A1
Electricity

High performance MOSFET

InventorID:

28672 ⎘

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