Poughkeepsie, New York
United States
25
2020-02-27
The entities that hold a legal rights for patent applications filed by inventor Krishnan Rishikesh:
Rishikesh Krishnan from Poughkeepsie, US has applied for patents for these inventions. The list has both pending applications and granted patents:
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
#2 | 2018-04-05FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
#3 | 2016-07-07FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
#4 | 2016-02-04FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
#5 | 2016-01-28Hydroxyl group termination for nucleation of a dielectric metallic oxide
#6 | 2015-12-17Wafer stress control with backside patterning
#7 | 2015-12-03finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
#8 | 2015-07-30STRUCTURE AND PROCESS TO DECOUPLE DEEP TRENCH CAPACITORS AND WELL ISOLATION
#9 | 2015-02-12Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches
#10 | 2015-01-01Capacitors Having Dielectric Regions that Include Multiple Metal Oxide-Comprising Materials
#11 | 2014-10-16Hydroxyl group termination for nucleation of a dielectric metallic oxide
#12 | 2014-07-03DEPOSITION OF PURE METALS IN 3D STRUCTURES
#13 | 2014-02-27Non-volatile memory structure employing high-k gate dielectric and metal gate
#14 | 2013-08-22Replacement gate with reduced gate leakage current
#15 | 2013-08-08Shallow trench isolation for device including deep trench capacitors
#16 | 2013-07-11Thermally stable high-K tetragonal HFOlayer within high aspect ratio deep trenches
#17 | 2013-05-02Non-volatile memory structure employing high-k gate dielectric and metal gate
#18 | 2013-01-10Methods of making crystalline tantalum pentoxide
#19 | 2012-12-20Capacitors having dielectric regions that include multiple metal oxide-comprising materials
#20 | 2012-11-08Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials
#21 | 2012-08-02Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitor
#22 | 2012-07-19Replacement gate with reduced gate leakage current
#23 | 2011-12-08Methods of making crystalline tantalum pentoxide
#24 | 2010-12-16Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials
#25 | 2010-12-16Capacitors having dielectric regions that include multiple metal oxide-comprising materials
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