Inventor profile of:

Xin Lin

City:

Phoenix, Arizona

Country:

United States

Published Applications:

78

Last publication date:

2026-05-28

Top Assignees for applications by Xin Lin

The entities that hold a legal rights for patent applications filed by inventor Lin Xin:

Recent patent applications by Lin Xin

Xin Lin from Phoenix, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-05-28
US20260150639A1
Electricity

HV BCD TECHNOLOGY WITH NOVEL DTI STRUCTURES

#2 | 2023-12-07
US20230395646A1
Electricity

POLYCRYSTALLINE SEMICONDUCTOR RESISTOR

#3 | 2023-05-04
US20230138580A1
Electricity

Capacitor with an electrode well

#4 | 2022-09-15
US20220293771A1
Electricity

LDMOS with an improved breakdown performance

#5 | 2022-03-03
US20220069077A1
Electricity

Apparatus for extension of operation voltage

#6 | 2020-10-15
US20200328304A1
Electricity

LDMOS with diode coupled isolation ring

#7 | 2020-01-30
US20200035827A1
Electricity

Semiconductor device with drain active area

#8 | 2018-05-31
US20180151723A1
Electricity

Laterally diffused metal oxide semiconducting devices with lightly-doped isolation layers

#9 | 2018-05-10
US20180130903A1
Electricity

Semiconductor device isolation with RESURF layer arrangement

#10 | 2018-04-10
US15456168
Electricity

Semiconductor device isolation via depleted coupling layer

#11 | 2018-02-27
US15435694
Electricity

Semiconductor device and method of making

#12 | 2017-12-07
US20170352756A1
Electricity

Semiconductor device and method of making

#13 | 2017-11-28
US15430341
Electricity

Alternating source region arrangement

#14 | 2017-09-12
US15242322
Electricity

Laterally diffused MOSFET with isolation region

#15 | 2017-06-22
US20170179279A1
Electricity

Partial, self-biased isolation in semiconductor devices

#16 | 2017-05-04
US20170125584A1
Electricity

Self-adjusted isolation bias in semiconductor devices

#17 | 2017-04-04
US15076617
Electricity

Partial, self-biased isolation in semiconductor devices

#18 | 2017-03-23
US20170084715A1
Electricity

Diodes with multiple junctions

#19 | 2017-03-16
US20170077296A1
Electricity

Partially biased isolation in semiconductor device

#20 | 2017-03-16
US20170077295A1
Electricity

Partially biased isolation in semiconductor devices

#21 | 2017-03-16
US20170077219A1
Electricity

Partially biased isolation in semiconductor devices

#22 | 2017-02-23
US20170053999A1
Electricity

Semiconductor device with enhanced 3D resurf

#23 | 2017-01-10
US14832379
Electricity

Diodes with multiple junctions

#24 | 2016-11-29
US14822122
Electricity

LDMOS device with high-potential-biased isolation ring

#25 | 2016-06-23
US20160181421A1
Electricity

Semiconductor devices and related fabrication methods

#26 | 2016-04-05
US14548616
Electricity

Semiconductor devices and related fabrication methods

#27 | 2016-03-24
US20160087096A1
Electricity

Semiconductor device with improved breakdown voltage

#28 | 2015-12-31
US20150380513A1
Electricity

Bipolar transistor device fabrication methods

#29 | 2015-11-19
US20150333189A1
Electricity

Zener diode devices and related fabrication methods

#30 | 2015-11-12
US20150325674A1
Electricity

Methods of fabricating diodes with multiple junctions

#31 | 2015-11-12
US20150325565A1
Electricity

Composite semiconductor device with multiple threshold voltages

#32 | 2015-09-24
US20150270333A1
Electricity

Semiconductor device with peripheral breakdown protection

#33 | 2015-08-13
US20150228713A1
Electricity

High voltage diode

#34 | 2015-06-11
US20150162417A1
Electricity

Zener diode devices and related fabrication methods

#35 | 2015-06-04
US20150155350A1
Electricity

Resurf high voltage diode

#36 | 2015-05-07
US20150123236A1
Electricity

Diodes with multiple junctions and fabrication methods therefor

#37 | 2015-04-16
US20150104920A1
Electricity

Semiconductor device and related fabrication methods

#38 | 2015-04-09
US20150097265A1
Electricity

Semiconductor device with buried conduction path

#39 | 2015-01-01
US20150004768A1
Electricity

Drain-end drift diminution in semiconductor devices

#40 | 2014-12-11
US20140363945A1
Electricity

Methods for fabricating improved bipolar transistors

#41 | 2014-10-16
US20140308792A1
Electricity

Methods of producing bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations

#42 | 2014-08-28
US20140242762A1
Electricity

Method of fabricating a tunable schottky diode with depleted conduction path

#43 | 2014-08-21
US20140235025A1
Electricity

Semiconductor device and related fabrication methods

#44 | 2014-08-21
US20140231961A1
Electricity

Semiconductor device and related fabrication methods

#45 | 2014-07-31
US20140209988A1
Electricity

NONVOLATILE MEMORY BITCELL

#46 | 2014-07-24
US20140206168A1
Electricity

Methods for producing near zero channel length field drift LDMOS

#47 | 2014-07-24
US20140203358A1
Electricity

Semiconductor device with enhanced 3D resurf

#48 | 2014-07-03
US20140187014A1
Electricity

Methods for forming bipolar transistors

#49 | 2014-05-15
US20140134820A1
Electricity

Methods for producing bipolar transistors with improved stability

#50 | 2014-04-24
US20140110815A1
Electricity

High voltage diode

#51 | 2014-04-24
US20140110814A1
Electricity

Resurf high voltage diode

#52 | 2014-03-13
US20140070312A1
Electricity

Semiconductor device and related fabrication methods

#53 | 2014-03-06
US20140061858A1
Electricity

Semiconductor device with diagonal conduction path

#54 | 2014-03-06
US20140061731A1
Electricity

Tunable schottky diode with depleted conduction path

#55 | 2014-03-06
US20140061715A1
Electricity

Zener diode device and fabrication

#56 | 2014-02-27
US20140054747A1
Electricity

Bipolar transistor

#57 | 2014-01-16
US20140015090A1
Electricity

Bipolar transistor with high breakdown voltage

#58 | 2014-01-02
US20140001594A1
Electricity

Schottky diode with leakage current control structures

#59 | 2013-11-07
US20130292764A1
Electricity

Semiconductor device with drain-end drift diminution

#60 | 2013-06-13
US20130149831A1
Electricity

Methods for fabricating bipolar transistors with improved gain

#61 | 2012-10-18
US20120264270A1
Electricity

Methods for forming high gain tunable bipolar transistors

#62 | 2012-08-16
US20120205738A1
Electricity

Near zero channel length field drift LDMOS

#63 | 2012-07-26
US20120187538A1
Electricity

Bipolar transistor with two different emitter portions having same type dopant of different concentrations for improved gain

#64 | 2012-04-26
US20120098096A1
Electricity

Bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations

#65 | 2012-04-26
US20120098095A1
Electricity

Bipolar transistor with improved stability

#66 | 2011-09-22
US20110227135A1
Electricity

Schottky diodes

#67 | 2011-07-21
US20110175199A1
Electricity

Zener diode with reduced substrate current

#68 | 2011-06-23
US20110147893A1
Electricity

Bipolar transistors with hump regions

#69 | 2011-05-26
US20110121428A1
Electricity

High gain tunable bipolar transistor

#70 | 2011-04-21
US20110089500A1
Electricity

Multi-gate semiconductor devices

#71 | 2011-01-20
US20110012232A1
Electricity

Bipolar transistor

#72 | 2010-12-02
US20100301400A1
Electricity

Method for forming a Schottky diode

#73 | 2010-07-29
US20100187577A1
Electricity

Schottky diode

#74 | 2009-12-24
US20090315145A1
Electricity

Adjustable bipolar transistors formed using a CMOS process

#75 | 2009-10-29
US20090267127A1
Electricity

Single poly NVM devices and arrays

#76 | 2008-05-29
US20080121997A1
Electricity

Multi-gate semiconductor device and method for forming the same

#77 | 2007-07-12
US20070158777A1
Electricity

High voltage field effect device and method

#78 | 2006-11-09
US20060249751A1
Electricity

High voltage field effect device and method

InventorID:

286869 ⎘