Beacon, New York
United States
38
2013-01-10
The entities that hold a legal rights for patent applications filed by inventor Kumar Kaushik A.:
Kaushik A. Kumar from Beacon, US has applied for patents for these inventions. The list has both pending applications and granted patents:
On-chip cooling for integrated circuits
#2 | 2010-06-03On-chip cooling systems for integrated circuits
#3 | 2010-06-03Metal interconnect and IC chip including metal interconnect
#4 | 2009-06-04Method for fabricating a semiconductor structure
#5 | 2009-05-07SELF-ASSEMBLED MATERIAL PATTERN TRANSFER CONTRAST ENHANCEMENT
#6 | 2009-04-30Thermal gradient control of high aspect ratio etching and deposition processes
#7 | 2009-04-16On-chip cooling systems for integrated circuits
#8 | 2009-04-02METHOD OF MINIMIZING VIA SIDEWALL DAMAGES DURING DUAL DAMASCENE TRENCH REACTIVE ION ETCHING IN A VIA FIRST SCHEME
#9 | 2009-04-02Structures and methods for reduction of parasitic capacitances in semiconductor integrated circuits
#10 | 2009-01-15Method for forming conductive structures
#11 | 2009-01-15MANUFACTURING IC CHIP IN PORTIONS FOR LATER COMBINING, AND RELATED STRUCTURE
#12 | 2009-01-01Metal interconnect forming methods and IC chip including metal interconnect
#13 | 2008-12-30Damascene wiring fabrication methods incorporating dielectric cap etch process with hard mask retention
#14 | 2008-11-20Sidewall semiconductor transistors
#15 | 2008-10-16Polycarbosilane buried etch stops in interconnect structures
#16 | 2008-08-21STRUCTURE FOR REDUCING LATERAL FRINGE CAPACITANCE IN SEMICONDUCTOR DEVICES
#17 | 2008-05-01Dual damascene integration of ultra low dielectric constant porous materials
#18 | 2008-02-21Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabrication same
#19 | 2007-11-29Method of forming a structure for reducing lateral fringe capacitance in semiconductor devices
#20 | 2007-08-09MOSFET WTH HIGH ANGLE SIDEWALL GATE AND CONTACTS FOR REDUCED MILLER CAPACITANCE
#21 | 2007-05-17Polycarbosilane buried etch stops in interconnect structures
#22 | 2007-04-26Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabricating same
#23 | 2007-03-15Post-etch removal of fluorocarbon-based residues from a hybrid dielectric structure
#24 | 2007-03-15MOSFET with high angle sidewall gate and contacts for reduced miller capacitance
#25 | 2007-03-06Polycarbosilane buried etch stops in interconnect structures
#26 | 2007-01-11DETECTION OF LOSS OF PLASMA CONFINEMENT
#27 | 2006-12-28Back end interconnect with a shaped interface
#28 | 2006-06-15Sidewall semiconductor transistors
#29 | 2006-06-08Method for dual damascene integration of ultra low dielectric constant porous materials
#30 | 2006-05-25Lowered Source/Drain Transistors
#31 | 2006-05-23De-fluorination of wafer surface and related structure
#32 | 2005-09-22OXIDIZED TANTALUM NITRIDE AS AN IMPROVED HARDMASK IN DUAL-DAMASCENE PROCESSING
#33 | 2005-05-26Back end interconnect with a shaped interface
#34 | 2005-05-26Crystallographic modification of hard mask properties
#35 | 2005-04-14Photoresist ash process with reduced inter-level dielectric ( ILD) damage
#36 | 2005-04-05Method for reactive ion etch processing of a dual damascene structure
#37 | 2005-03-31Plasma surface modification and passivation of organo-silicate glass films for improved hardmask adhesion and optimal RIE processing
#38 | 2005-02-24Dual damascene integration of ultra low dielectric constant porous materials
28752 ⎘