Inventor profile of:

Kaushik A. Kumar

City:

Beacon, New York

Country:

United States

Published Applications:

38

Last publication date:

2013-01-10

Top Assignees for applications by Kaushik A. Kumar

The entities that hold a legal rights for patent applications filed by inventor Kumar Kaushik A.:

Recent patent applications by Kumar Kaushik A.

Kaushik A. Kumar from Beacon, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-01-10
US20130012018A1
Electricity

On-chip cooling for integrated circuits

#2 | 2010-06-03
US20100136800A1
Electricity

On-chip cooling systems for integrated circuits

#3 | 2010-06-03
US20100133694A1
Electricity

Metal interconnect and IC chip including metal interconnect

#4 | 2009-06-04
US20090142894A1
Electricity

Method for fabricating a semiconductor structure

#5 | 2009-05-07
US20090117360A1
Electricity

SELF-ASSEMBLED MATERIAL PATTERN TRANSFER CONTRAST ENHANCEMENT

#6 | 2009-04-30
US20090107956A1
Electricity

Thermal gradient control of high aspect ratio etching and deposition processes

#7 | 2009-04-16
US20090096056A1
Electricity

On-chip cooling systems for integrated circuits

#8 | 2009-04-02
US20090087992A1
Electricity

METHOD OF MINIMIZING VIA SIDEWALL DAMAGES DURING DUAL DAMASCENE TRENCH REACTIVE ION ETCHING IN A VIA FIRST SCHEME

#9 | 2009-04-02
US20090085210A1
Electricity

Structures and methods for reduction of parasitic capacitances in semiconductor integrated circuits

#10 | 2009-01-15
US20090017616A1
Electricity

Method for forming conductive structures

#11 | 2009-01-15
US20090014868A1
Electricity

MANUFACTURING IC CHIP IN PORTIONS FOR LATER COMBINING, AND RELATED STRUCTURE

#12 | 2009-01-01
US20090001592A1
Electricity

Metal interconnect forming methods and IC chip including metal interconnect

#13 | 2008-12-30
US12121378
-

Damascene wiring fabrication methods incorporating dielectric cap etch process with hard mask retention

#14 | 2008-11-20
US20080286909A1
Electricity

Sidewall semiconductor transistors

#15 | 2008-10-16
US20080254612A1
Electricity

Polycarbosilane buried etch stops in interconnect structures

#16 | 2008-08-21
US20080197495A1
Electricity

STRUCTURE FOR REDUCING LATERAL FRINGE CAPACITANCE IN SEMICONDUCTOR DEVICES

#17 | 2008-05-01
US20080099923A1
Physics

Dual damascene integration of ultra low dielectric constant porous materials

#18 | 2008-02-21
US20080042174A1
Electricity

Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabrication same

#19 | 2007-11-29
US20070275552A1
Electricity

Method of forming a structure for reducing lateral fringe capacitance in semiconductor devices

#20 | 2007-08-09
US20070184621A1
Electricity

MOSFET WTH HIGH ANGLE SIDEWALL GATE AND CONTACTS FOR REDUCED MILLER CAPACITANCE

#21 | 2007-05-17
US20070111509A1
Electricity

Polycarbosilane buried etch stops in interconnect structures

#22 | 2007-04-26
US20070092990A1
Electricity

Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabricating same

#23 | 2007-03-15
US20070059922A1
Electricity

Post-etch removal of fluorocarbon-based residues from a hybrid dielectric structure

#24 | 2007-03-15
US20070057334A1
Electricity

MOSFET with high angle sidewall gate and contacts for reduced miller capacitance

#25 | 2007-03-06
US10699238
-

Polycarbosilane buried etch stops in interconnect structures

#26 | 2007-01-11
US20070007244A1
Physics

DETECTION OF LOSS OF PLASMA CONFINEMENT

#27 | 2006-12-28
US20060292852A1
Electricity

Back end interconnect with a shaped interface

#28 | 2006-06-15
US20060124993A1
Electricity

Sidewall semiconductor transistors

#29 | 2006-06-08
US20060118961A1
Physics

Method for dual damascene integration of ultra low dielectric constant porous materials

#30 | 2006-05-25
US20060108651A1
Electricity

Lowered Source/Drain Transistors

#31 | 2006-05-23
US10907463
-

De-fluorination of wafer surface and related structure

#32 | 2005-09-22
US20050208742A1
Electricity

OXIDIZED TANTALUM NITRIDE AS AN IMPROVED HARDMASK IN DUAL-DAMASCENE PROCESSING

#33 | 2005-05-26
US20050112864A1
Electricity

Back end interconnect with a shaped interface

#34 | 2005-05-26
US20050112862A1
Electricity

Crystallographic modification of hard mask properties

#35 | 2005-04-14
US20050077629A1
Electricity

Photoresist ash process with reduced inter-level dielectric ( ILD) damage

#36 | 2005-04-05
US10709630
-

Method for reactive ion etch processing of a dual damascene structure

#37 | 2005-03-31
US20050067702A1
Electricity

Plasma surface modification and passivation of organo-silicate glass films for improved hardmask adhesion and optimal RIE processing

#38 | 2005-02-24
US20050040532A1
Physics

Dual damascene integration of ultra low dielectric constant porous materials

InventorID:

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