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Inventor profile of:

John Logan

City:

Lawrence, Massachusetts

Country:

United States

Published Applications:

4

Last publication date:

2021-11-25

Top Assignees for applications by John Logan

The entities that hold a legal rights for patent applications filed by inventor Logan John:

  • RAYTHEON COMPANY 4 Waltham, MA United States

Recent patent applications by Logan John

John Logan from Lawrence, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2021-11-25
US20210367055A1
Electricity

Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers

#2 | 2021-11-11
US20210351288A1
Electricity

Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors

#3 | 2021-07-01
US20210202729A1
Electricity

Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement

#4 | 2020-10-15
US20200328296A1
Electricity

Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors

InventorID:

2881190 ⎘

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