Williston, Vermont
United States
19
2025-03-06
The entities that hold a legal rights for patent applications filed by inventor Levy Mark:
Mark Levy from Williston, US has applied for patents for these inventions. The list has both pending applications and granted patents:
SEAL RINGS FOR A WIDE BAND-GAP SEMICONDUCTOR LAYER STACK
#2 | 2024-07-04DEVICE INTEGRATION SCHEMES LEVERAGING A BULK SEMICONDUCTOR SUBSTRATE HAVING A <111> CRYSTAL ORIENTATION
#3 | 2024-05-16COMPOUND-SEMICONDUCTOR WAVEGUIDES WITH AIRGAP CLADDING
#4 | 2024-01-11Microfluidic channels sealed with directionally-grown plugs
#5 | 2024-01-11MICROFLUIDIC CHANNELS IN A SUBSTRATE WITH A SURFACE COVERED BY A LAYER STACK
#6 | 2023-07-13INTEGRATION OF COMPOUND-SEMICONDUCTOR-BASED DEVICES AND SILICON-BASED DEVICES
#7 | 2023-04-27Contact-over-active-gate transistor structures with contacts landed on enlarged gate portions
#8 | 2023-04-20Implanted isolation for device integration on a common substrate
#9 | 2023-01-31Distributed Bragg reflectors including periods with airgaps
#10 | 2022-12-29Couplers including a waveguide core with integrated airgaps
#11 | 2022-12-08Device integration schemes leveraging a bulk semiconductor substrate having a <111> crystal orientation
#12 | 2022-06-16Heterojunction bipolar transistors with undercut extrinsic base regions
#13 | 2022-06-02Implanted isolation for device integration on a common substrate
#14 | 2022-04-21Device integration schemes leveraging a bulk semiconductor substrate having a <111 > crystal orientation
#15 | 2022-03-01Isolation trenches augmented with a trap-rich layer
#16 | 2021-12-02Field-effect transistors with a polycrystalline body in a shallow trench isolation region
#17 | 2021-09-23Epitaxial growth constrained by a template
#18 | 2020-11-12Heterojunction bipolar transistors having bases with different elevations
#19 | 2019-06-04Heterojunction bipolar transistors with multiple emitter fingers and undercut extrinsic base regions
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