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Inventor profile of:

Houyi Cheng

City:

Beijing

Country:

China

Published Applications:

1

Last publication date:

2020-11-12

Recent patent applications by Cheng Houyi

Houyi Cheng from Beijing, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-11-12

US20200357983A1

Magnetic tunnel junction reference layer, magnetic tunnel junctions and magnetic random access memory

InventorID:

2906218 ⎘