Inventor profile of:

Kenneth E. Morgan

City:

Castleton, New York

Country:

United States

Published Applications:

22

Last publication date:

2020-11-12

Top Assignees for applications by Kenneth E. Morgan

The entities that hold a legal rights for patent applications filed by inventor Morgan Kenneth E.:

Recent patent applications by Morgan Kenneth E.

Kenneth E. Morgan from Castleton, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-11-12
US20200354852A1
Chemistry; metallurgy

Defect reduction in seeded aluminum nitride crystal growth

#2 | 2019-10-17
US20190316272A1
Chemistry; metallurgy

Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them

#3 | 2019-04-11
US20190106808A1
Chemistry; metallurgy

Defect reduction in seeded aluminum nitride crystal growth

#4 | 2017-07-06
US20170191184A1
Chemistry; metallurgy

Defect reduction in seeded aluminum nitride crystal growth

#5 | 2017-06-08
US20170159207A1
Chemistry; metallurgy

Method and apparatus for producing large, single-crystals of aluminum nitride

#6 | 2017-05-25
US20170145592A1
Chemistry; metallurgy

Large aluminum nitride crystals with reduced defects and methods of making them

#7 | 2016-12-01
US20160348273A1
Chemistry; metallurgy

Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them

#8 | 2016-07-21
US20160208417A1
Chemistry; metallurgy

Large aluminum nitride crystals with reduced defects and methods of making them

#9 | 2015-08-06
US20150218729A1
Chemistry; metallurgy

Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them

#10 | 2015-03-19
US20150079329A1
Chemistry; metallurgy

Method and apparatus for producing large, single-crystals of aluminum nitride

#11 | 2015-01-22
US20150020731A1
Chemistry; metallurgy

Defect reduction in seeded aluminum nitride crystal growth

#12 | 2015-01-15
US20150013592A1
Chemistry; metallurgy

Defect reduction in seeded aluminum nitride crystal growth

#13 | 2014-04-03
US20140093671A1
Chemistry; metallurgy

LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM

#14 | 2014-03-06
US20140061666A1
Electricity

Method and apparatus for producing large, single-crystals of aluminum nitride

#15 | 2013-06-20
US20130157442A1
Electricity

Defect reduction in seeded aluminum nitride crystal growth

#16 | 2013-06-20
US20130152852A1
Chemistry; metallurgy

Large aluminum nitride crystals with reduced defects and methods of making them

#17 | 2011-01-13
US20110008621A1
Chemistry; metallurgy

Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them

#18 | 2010-06-03
US20100135349A1
Electricity

Nitride semiconductor heterostructures and related methods

#19 | 2009-11-19
US20090283028A1
Electricity

Nitride semiconductor heterostructures and related methods

#20 | 2008-07-31
US20080182092A1
Chemistry; metallurgy

Defect reduction in seeded aluminum nitride crystal growth

#21 | 2007-10-18
US20070243653A1
Chemistry; metallurgy

Methods for controllable doping of aluminum nitride bulk crystals

#22 | 2007-05-10
US20070101932A1
Chemistry; metallurgy

Method and apparatus for producing large, single-crystals of aluminum nitride

InventorID:

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