Ithaca, New York
United States
15
2026-03-05
The entities that hold a legal rights for patent applications filed by inventor Shealy James R.:
James R. Shealy from Ithaca, US has applied for patents for these inventions. The list has both pending applications and granted patents:
VERTICAL GALLIUM NITRIDE CONTAINING FIELD EFFECT TRANSISTOR WITH SILICON NITRIDE PASSIVATION AND GATE DIELECTRIC REGIONS
#2 | 2025-12-30Vertical gallium nitride containing field effect transistor with silicon nitride passivation and gate dielectric regions
#3 | 2024-08-20Method for implant and anneal for high voltage field effect transistors
#4 | 2024-06-27VERTICAL FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF FABRICATION
#5 | 2023-11-30Vertical field effect transistor device and method of fabrication
#6 | 2023-01-12Beryllium doped GaN-based light emitting diode and method
#7 | 2023-01-12Beryllium doped GaN-based light emitting diode and method
#8 | 2022-10-11Beryllium doped GaN-based light emitting diode and method
#9 | 2022-05-05Vertical field effect transistor device and method of fabrication
#10 | 2022-02-15Vertical field effect transistor device and method of fabrication
#11 | 2013-06-20Gated III-V semiconductor structure and method
#12 | 2012-06-21Chemical vapor deposition process for aluminum silicon nitride
#13 | 2012-06-21Method for forming III-V semiconductor structures including aluminum-silicon nitride passivation
#14 | 2012-06-21III-V semiconductor structures including aluminum-silicon nitride passivation
#15 | 2006-09-07Single step, high temperature nucleation process for a lattice mismatched substrate
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