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Inventor profile of:

Witold Kula

City:

Cupertino, California

Country:

United States

Published Applications:

Last publication date:

2013-06-20

Top Assignees for applications by Witold Kula

The entities that hold a legal rights for patent applications filed by inventor Kula Witold:

MAGIC TECHNOLOGIES, INC. 15 Milpitas, CA United States
Hitachi Global Storage Technologies Netherlands B.V. 6 Amsterdam, Netherlands
Silicon Magnetic Systems 2 San Jose, CA United States
Headway Technologies, Inc. 2 Milpitas, CA United States
Cypress Semiconductor Corp. 1 San Jose, CA United States

Recent patent applications by Kula Witold

Witold Kula from Cupertino, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-06-20

US20130154038A1

Electricity

High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same

#2 | 2011-06-09

US20110133300A1

Electricity

Bottom electrode for MRAM device

#3 | 2011-03-31

US20110076785A1

Electricity

Process to fabricate bottom electrode for MRAM device

#4 | 2010-10-14

US20100261295A1

Electricity

High performance MTJ element for STT-RAM and method for making the same

#5 | 2010-10-14

US20100258889A1

Electricity

High performance MTJ elements for STT-RAM and method for making the same

#6 | 2010-10-14

US20100258888A1

Electricity

High performance MTJ element for STT-RAM and method for making the same

#7 | 2010-09-23

US20100240151A1

Electricity

Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices

#8 | 2010-06-03

US20100136713A1

Electricity

Process for manufacturing a magnetic tunnel junction (MTJ) device

#9 | 2010-05-11

US12316501

Field angle sensor fabricated using reactive ion etching

#10 | 2010-03-18

US20100065935A1

Electricity

Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM

#11 | 2009-07-09

US20090173977A1

Electricity

Method of MRAM fabrication with zero electrical shorting

#12 | 2009-04-30

US20090108383A1

Electricity

High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same

#13 | 2009-03-26

US20090078927A1

Electricity

Composite hard mask for the etching of nanometer size magnetic multilayer based device

#14 | 2009-01-29

US20090027810A1

Electricity

High performance MTJ element for STT-RAM and method for making the same

#15 | 2008-04-17

US20080090307A1

Electricity

Bottom electrode for MRAM device and method to fabricate it

#16 | 2008-04-17

US20080088986A1

Electricity

Hafnium doped cap and free layer for MRAM device

#17 | 2007-04-17

US11039301

Methods for fabricating magnetic cell junctions and a structure resulting and/or used for such methods

#18 | 2007-04-03

US10786440

Magnetic memory cell junction and method for forming a magnetic memory cell junction

#19 | 2006-03-07

US10298340

Method of manufacturing enhanced spin-valve sensor with engineered overlayer

#20 | 2005-10-13

US20050226998A1

Performing operations; transporting

Fabrication of self-aligned reflective/protective overlays on magnetoresistance sensors

#21 | 2005-10-11

US9846707

Underlayer for high amplitude spin valve sensors

#22 | 2005-07-05

US10309938

Fabrication of self-aligned reflective/protective overlays on magnetoresistance sensors, and the sensors

#23 | 2005-05-17

US10309380

Method for oxidizing a metal layer

#24 | 2005-03-15

US9614945

Spin valve magnetic properties with oxygen-rich NiO underlayer

#25 | 2005-01-06

US20050002127A1

Performing operations; transporting

Enhanced spin-valve sensor with engineered overlayer formed on a free layer

InventorID:

294368 ⎘