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Inventor profile of:

Fei Yang

City:

Plano, Texas

Country:

United States

Published Applications:

5

Last publication date:

2025-07-03

Top Assignees for applications by Fei Yang

The entities that hold a legal rights for patent applications filed by inventor Yang Fei:

  • Board of Regents, The University of Texas System 3 Austin, TX United States
  • Boards of Regents, The University of Texas System 1 Austin, TX United States

Recent patent applications by Yang Fei

Fei Yang from Plano, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-07-03
US20250219525A1
Electricity

RESISTOR DETECTION CIRCUIT

#2 | 2023-03-09
US20230076735A1
Physics

Systems, circuits, and methods to detect gate-open failures in MOS based insulated gate transistors

#3 | 2021-12-23
US20210396596A1
Physics

Methods of measuring real-time junction temperature in silicon carbide power MOSFET devices using turn-on delay, related circuits, and computer program products

#4 | 2020-12-31
US20200408829A1
Physics

Methods of determining operating conditions of silicon carbide power MOSFET devices associated with aging, related circuits and computer program products

#5 | 2020-12-24
US20200400738A1
Physics

Methods of monitoring conditions associated with aging of silicon carbide power MOSFET devices in-situ, related circuits and computer program products

InventorID:

2943927 ⎘

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