Inventor profile of:

Stuart Sieg

City:

Albany, New York

Country:

United States

Published Applications:

18

Last publication date:

2024-06-20

Top Assignees for applications by Stuart Sieg

The entities that hold a legal rights for patent applications filed by inventor Sieg Stuart:

Recent patent applications by Sieg Stuart

Stuart Sieg from Albany, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-06-20
US20240203984A1
Electricity

STACKED TRANSISTORS WITH STEPPED CONTACTS

#2 | 2024-06-20
US20240203780A1
Electricity

DIELECTRIC FILLED ALIGNMENT MARK STRUCTURES

#3 | 2024-05-30
US20240178292A1
Electricity

SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS

#4 | 2024-02-29
US20240071811A1
Electricity

STACKED FET SUBSTRATE CONTACT

#5 | 2023-12-28
US20230420503A1
Electricity

COMMON SELF ALIGNED GATE CONTACT FOR STACKED TRANSISTOR STRUCTURES

#6 | 2023-12-21
US20230411212A1
Electricity

SHALLOW AND DEEP CONTACTS WITH STITCHING

#7 | 2023-12-14
US20230402318A1
Electricity

VIA CONNECTION TO BACKSIDE POWER DELIVERY NETWORK

#8 | 2023-10-05
US20230317802A1
Electricity

High aspect ratio contact structure with multiple metal stacks

#9 | 2023-06-08
US20230178437A1
Electricity

INTEGRATING GATE-CUTS AND SINGLE DIFFUSION BREAK ISOLATION POST-RMG USING LOW-TEMPERATURE PROTECTIVE LINERS

#10 | 2023-06-08
US20230178433A1
Electricity

BURIED POWER RAIL AT TIGHT CELL-TO-CELL SPACE

#11 | 2023-05-18
US20230154783A1
Electricity

REPLACEMENT BURIED POWER RAIL

#12 | 2023-05-11
US20230143705A1
Electricity

Bottom contact for stacked GAA FET

#13 | 2023-05-04
US20230139929A1
Electricity

STRUCTURE CONTAINING A VIA-TO-BURIED POWER RAIL CONTACT STRUCTURE OR A VIA-TO-BACKSIDE POWER RAIL CONTACT STRUCTURE

#14 | 2023-05-04
US20230138978A1
Electricity

Structure and method to pattern pitch lines

#15 | 2023-03-30
US20230100113A1
Electricity

Buried power rails located in a base layer including first, second, and third etch stop layers

#16 | 2022-03-31
US20220102153A1
Electricity

Using a same mask for direct print and self-aligned double patterning of nanosheets

#17 | 2021-01-21
US20210020446A1
Electricity

Using a same mask for direct print and self-aligned double patterning of nanosheets

#18 | 2020-12-31
US20200411682A1
Electricity

Selective source/drain recess for improved performance, isolation, and scaling

InventorID:

2953161 ⎘