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Inventor profile of:

Jun-Yao CHEN

City:

Hsinchu

Country:

Taiwan

Published Applications:

Last publication date:

2026-06-11

Top Assignees for applications by Jun-Yao CHEN

The entities that hold a legal rights for patent applications filed by inventor CHEN Jun-Yao:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 10 Hsinchu, Taiwan
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 2 Hsinchu, Taiwan

Recent patent applications by CHEN Jun-Yao

Jun-Yao CHEN from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-11

US20260165032A1

Electricity

MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

#2 | 2026-05-21

US20260143972A1

Electricity

MEMORY DEVICE AND FABRICATION METHOD THEREOF

#3 | 2025-08-28

US20250275484A1

Electricity

MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS

#4 | 2024-03-14

US20240090343A1

Electricity

Magnetic tunnel junction structures and related methods

#5 | 2023-11-30

US20230389443A1

Electricity

MEMORY DEVICE AND FABRICATION METHOD THEREOF

#6 | 2023-10-26

US20230345842A1

Electricity

MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

#7 | 2023-08-24

US20230270018A1

Electricity

Embedded MRAM fabrication process for ion beam etching with protection by top electrode spacer

#8 | 2022-08-18

US20220263013A1

Electricity

Magnetic tunnel junction structures and related methods

#9 | 2022-01-20

US20220020920A1

Electricity

MEMORY DEVICE AND FABRICATION METHOD THEREOF

#10 | 2021-12-16

US20210391530A1

Electricity

Magnetic tunnel junction structures and related methods

#11 | 2021-09-30

US20210305496A1

Electricity

Embedded MRAM fabrication process for ion beam etching with protection by top electrode spacer

#12 | 2020-12-31

US20200411751A1

Electricity

Embedded MRAM fabrication process for ion beam etching with protection by top electrode spacer

InventorID:

2953216 ⎘