Duanquan LIAO

City:

Shanghai

Country:

China

Published Applications:

Last publication date:

2022-03-03

Top Assignees for applications by Duanquan LIAO

The entities that hold a legal rights for patent applications filed by inventor LIAO Duanquan:

Duanquan LIAO from Shanghai, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

Method for improving size of contact holes of FDSOI device

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR SAME

Silicon-on-insulator structure having bipolar stress, and manufacturing method therefor

InventorID:

3004635 ⎘