Lain-Jong Li

SEMICONDUCTOR DEVICE WITH TWO-DIMENSIONAL MATERIALS

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

RESISTIVE MEMORY DEVICES USING A CARBON-BASED CONDUCTOR LINE AND METHODS FOR FORMING THE SAME

METHOD OF FORMING STACKED UNIT LAYERS AND STACKED TWO-DIMENSIONAL MATERIAL LAYERS, AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE

FIN FIELD-EFFECT TRANSISTOR DEVICE WITH LOW-DIMENSIONAL MATERIAL AND METHOD

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Method of Manufacturing Semiconductor Devices Including The Steps of Removing One or More of the Nanotubes from the Stack of Nanotubes, and/or Removing Spacers that Surrounds Each of the Plurality of Nanotubes, and Forming Gate Dielectric and/or Gate Electrode to the Nanotubes

CMOS FABRICATION METHODS FOR BACK-GATE TRANSISTOR

NANO TRANSISTORS WITH SOURCE/DRAIN HAVING SIDE CONTACTS TO 2-D MATERIAL

TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND METHOD FORMING SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

RESISTIVE MEMORY DEVICES USING A CARBON-BASED CONDUCTOR LINE AND METHODS FOR FORMING THE SAME

TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND METHOD FORMING SAME

SEMICONDUCTOR DEVICE

Semiconductor device and method of fabricating the same

Nano transistors with source/drain having side contacts to 2-D material

CMOS Fabrication Methods for Back-Gate Transistor

Semiconductor structure of stacked two-dimensional material layers

Method of manufacturing semiconductor devices including the steps of removing one or more of the nanotubes from the stack of nanotubes, and/or removing spacers that surrounds each of the plurality of nanotubes, and forming gate dielectric and/or gate electrode to the nanotubes

SEMICONDUCTOR DEVICE WITH TWO-DIMENSIONAL MATERIALS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Semiconductor structure, method of forming stacked unit layers and method of forming stacked two-dimensional material layers

Semiconductor device and method of manufacturing semiconductor device

Fin field-effect transistor device with low-dimensional material and method

Transistors with channels formed of low-dimensional materials and method forming same

Resistive memory devices using a carbon-based conductor line and methods for forming the same

Method of manufacturing semiconductor devices including the steps of removing a plurality of spacers that surrounds each of the plurality of nanotubes into a layer of nanotubes, and forming gate dielectric and/or gate electrode

CMOS Fabrication Methods for Back-Gate Transistor

Semiconductor device and method of fabricating the same

Nano transistors with source/drain having side contacts to 2-D material

Semiconductor device and manufacturing method thereof

Semiconductor device

Fin field-effect transistor device with low-dimensional material and method

Semiconductor device with two-dimensional materials

Semiconductor devices and methods of manufacture

Field effect transistor using transition metal dichalcogenide and a method for forming the same

Low dimensional material device and method

Semiconductor device and method of manufacturing semiconductor device

Resistive memory devices using a carbon-based conductor line and methods for forming the same

Semiconductor device and method of fabricating the same

Field effect transistor and method of manufacturing the same

Transistors with channels formed of low-dimensional materials and method forming same

Single-crystal hexagonal boron nitride layer and method forming same

Field effect transistor using transition metal dichalcogenide and a method for forming the same

Production of Graphene

Fabrication of large-area hexagonal boron nitride thin films

Copper damascene barrier and capping layer

ATR-FTIR metal surface cleanliness monitoring