Inventor profile of:

Cem Basceri

City:

Reston, Virginia

Country:

United States

Published Applications:

66

Last publication date:

2012-11-08

Top Assignees for applications by Cem Basceri

The entities that hold a legal rights for patent applications filed by inventor Basceri Cem:

Recent patent applications by Basceri Cem

Cem Basceri from Reston, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-11-08
US20120280306A1
Physics

One-transistor composite-gate memory

#2 | 2012-03-22
US20120070955A1
Electricity

Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects

#3 | 2012-01-19
US20120012812A1
Electricity

Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing

#4 | 2010-11-11
US20100282164A1
Chemistry; metallurgy

Methods and systems for controlling temperature during microfeature workpiece processing, E.G., CVD deposition

#5 | 2010-10-14
US20100258857A1
Electricity

Integrated circuitry

#6 | 2010-07-01
US20100167542A1
Electricity

Methods of titanium deposition

#7 | 2010-04-15
US20100091574A1
Physics

One-transistor composite-gate memory

#8 | 2009-07-16
US20090179231A1
Electricity

Integrated circuitry

#9 | 2009-05-21
US20090127656A1
Electricity

Dielectric relaxation memory

#10 | 2009-04-16
US20090095216A1
Performing operations; transporting

Supercritical fluid-assisted direct write for printing integrated circuits

#11 | 2008-10-30
US20080268633A1
Electricity

Methods of titanium deposition

#12 | 2007-12-06
US20070278609A1
Electricity

Semiconductor device

#13 | 2007-11-29
US20070275526A1
Physics

Methods of programming memory cells using manipulation of oxygen vacancies

#14 | 2007-11-22
US20070267689A1
Physics

One-transistor composite-gate memory

#15 | 2007-08-30
US20070200116A1
Electricity

Silicon carbide dimpled substrate

#16 | 2007-08-02
US20070178646A1
Electricity

Method of forming a layer comprising epitaxial silicon

#17 | 2007-06-14
US20070134934A1
Electricity

Methods of forming capacitor constructions

#18 | 2007-03-15
US20070059930A1
Electricity

Method of forming conductive metal silicides by reaction of metal with silicon

#19 | 2007-03-01
US20070049021A1
Electricity

ATOMIC LAYER DEPOSITION METHOD

#20 | 2007-02-01
US20070026601A1
Electricity

DRAM constructions and electronic systems

#21 | 2007-01-25
US20070018171A1
Electricity

Semiconductor device comprising a junction having a plurality of rings

#22 | 2007-01-18
US20070015359A1
Electricity

Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects

#23 | 2007-01-18
US20070015358A1
Electricity

Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects

#24 | 2006-12-14
US20060281284A1
Electricity

Method of manufacturing gallium nitride based high-electron mobility devices

#25 | 2006-12-14
US20060281238A1
Electricity

Method of manufacturing an adaptive AIGaN buffer layer

#26 | 2006-12-14
US20060278892A1
Electricity

Gallium nitride based high-electron mobility devices

#27 | 2006-11-30
US20060266235A1
Performing operations; transporting

Supercritical fluid-assisted direct write for printing integrated circuits

#28 | 2006-11-16
US20060258131A1
Electricity

Integrated circuitry

#29 | 2006-11-16
US20060258127A1
Chemistry; metallurgy

Semiconductor device including container having epitaxial silicon therein

#30 | 2006-11-16
US20060258087A1
Electricity

Methods of forming vertical transistor structures

#31 | 2006-11-16
US20060258086A1
Electricity

Methods of forming vertical transistor structures

#32 | 2006-11-16
US20060258071A1
Electricity

Methods of forming field effect transistors

#33 | 2006-11-16
US20060255400A1
Physics

One-transistor composite-gate memory

#34 | 2006-11-02
US20060246697A1
Electricity

Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects

#35 | 2006-10-31
US10704284
-

Capacitor constructions

#36 | 2006-10-05
US20060220072A1
Electricity

Vertical junction field effect transistor having an epitaxial gate

#37 | 2006-09-28
US20060213440A1
Chemistry; metallurgy

Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces

#38 | 2006-09-14
US20060205187A1
Chemistry; metallurgy

Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces

#39 | 2006-09-14
US20060204649A1
Chemistry; metallurgy

Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD deposition

#40 | 2006-09-07
US20060199312A1
Electricity

Method of manufacturing a vertical junction field effect transistor having an epitaxial gate

#41 | 2006-09-07
US20060198955A1
Chemistry; metallurgy

Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces

#42 | 2006-09-07
US20060196538A1
Chemistry; metallurgy

Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers

#43 | 2006-08-10
US20060174825A1
Chemistry; metallurgy

Method of forming semi-insulating silicon carbide single crystal

#44 | 2006-07-27
US20060163633A1
Electricity

Dielectric relaxation memory

#45 | 2006-07-27
US20060163632A1
Electricity

Dielectric relaxation memory

#46 | 2006-03-09
US20060051941A1
Electricity

Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistors

#47 | 2006-03-02
US20060046618A1
Performing operations; transporting

Methods and systems for determining physical parameters of features on microfeature workpieces

#48 | 2006-03-02
US20060046473A1
Electricity

Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects

#49 | 2006-03-02
US20060046459A1
Electricity

Method of forming a layer comprising epitaxial silicon and a field effect transistor

#50 | 2006-03-02
US20060046443A1
Electricity

Method of forming a layer comprising epitaxial silicon

#51 | 2006-03-02
US20060046442A1
Electricity

Method of forming epitaxial silicon-comprising material

#52 | 2006-03-02
US20060046395A1
Electricity

Method of forming a vertical transistor

#53 | 2006-03-02
US20060046394A1
Electricity

Method of forming a vertical transistor

#54 | 2006-03-02
US20060046392A1
Electricity

Methods of forming vertical transistor structures

#55 | 2006-03-02
US20060044863A1
Physics

One-transistor composite-gate memory

#56 | 2006-03-02
US20060043448A1
Electricity

Dielectric relaxation memory

#57 | 2006-02-23
US20060040437A1
Electricity

Methods of forming field effect transistors

#58 | 2006-02-23
US20060038244A1
Electricity

Gated field effect devices

#59 | 2006-02-09
US20060027836A1
Chemistry; metallurgy

Semiconductor substrate

#60 | 2006-01-19
US20060011130A1
Chemistry; metallurgy

Methods of growing epitaxial silicon

#61 | 2006-01-05
US20060001072A1
Electricity

Methods of forming a gated device

#62 | 2005-12-08
US20050269648A1
Electricity

Gated field effect device comprising gate dielectric having different K regions

#63 | 2005-12-08
US20050268856A1
Chemistry; metallurgy

Reactors, systems and methods for depositing thin films onto microfeature workpieces

#64 | 2005-04-21
US20050085071A1
Electricity

Methods of forming conductive material silicides by reaction of metal with silicon

#65 | 2005-04-21
US20050085058A1
Chemistry; metallurgy

Methods of forming conductive metal silicides by reaction of metal with silicon

#66 | 2005-03-22
US10234581
-

Integrated capacitors fabricated with conductive metal oxides

InventorID:

3074601 ⎘