Inventor profile of:

Ning Qu

City:

Reutlingen

Country:

Germany

Published Applications:

27

Last publication date:

2016-11-10

Top Assignees for applications by Ning Qu

The entities that hold a legal rights for patent applications filed by inventor Qu Ning:

Recent patent applications by Qu Ning

Ning Qu from Reutlingen, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2016-11-10
US20160329424A1
Electricity

SiC trench transistor and method for its manufacture

#2 | 2016-09-15
US20160268449A1
Electricity

Semiconductor apparatus having a trench Schottky barrier Schottky diode

#3 | 2016-09-15
US20160268255A1
Electricity

Semiconductor device having a trench MOS barrier Schottky diode

#4 | 2016-04-28
US20160118494A1
Electricity

MOS field-effect transistor and method for the production thereof

#5 | 2015-04-02
US20150091125A1
Electricity

Semiconductor array having temperature-compensated breakdown voltage

#6 | 2015-02-12
US20150041830A1
Electricity

Schottky diode

#7 | 2015-01-29
US20150028445A1
Electricity

High-voltage trench junction barrier Schottky diode

#8 | 2014-08-28
US20140239435A1
Electricity

Super-junction schottky PIN diode

#9 | 2014-02-06
US20140035090A1
Electricity

Trench schottky diode

#10 | 2014-01-23
US20140021509A1
Electricity

Semiconductor configuration having reduced on-state resistance

#11 | 2014-01-02
US20140001593A1
Electricity

Semiconductor arrangement having a Schottky diode

#12 | 2013-08-15
US20130207222A1
Electricity

Super-junction schottky oxide pin diode having thin P-type layers under the schottky contact

#13 | 2013-06-27
US20130161779A1
Electricity

Super trench schottky barrier schottky diode

#14 | 2012-11-08
US20120280353A1
Electricity

Protective element for electronic circuits

#15 | 2012-10-11
US20120256196A1
Electricity

SCHOTTKY DIODE

#16 | 2012-09-27
US20120241897A1
Electricity

Semiconductor system including a schottky diode

#17 | 2012-07-26
US20120187521A1
Electricity

SCHOTTKY DIODE HAVING A SUBSTRATE P-N DIODE

#18 | 2012-07-26
US20120187498A1
Electricity

Field-Effect Transistor with Integrated TJBS Diode

#19 | 2012-07-19
US20120181652A1
Electricity

Semiconductor system and method for manufacturing same

#20 | 2011-09-01
US20110212602A1
Electricity

Semiconductor device and method for manufacturing same

#21 | 2010-12-02
US20100301387A1
Electricity

Semiconductor device and method for its production

#22 | 2010-09-23
US20100237456A1
Electricity

Semiconductor device and method for its manufacture

#23 | 2009-08-20
US20090206438A1
Electricity

Semiconductor component

#24 | 2009-02-05
US20090032897A1
Electricity

Semiconductor device and method for its manufacture

#25 | 2008-08-21
US20080197439A1
Electricity

Semiconductor device and method for manufacturing same

#26 | 2008-06-05
US20080128850A1
Electricity

Semiconductor device and method for manufacturing same

#27 | 2006-06-29
US20060138778A1
Mechanical engineering

Electric motor

InventorID:

307654 ⎘