Durham, North Carolina
United States
19
2012-11-29
The entities that hold a legal rights for patent applications filed by inventor Emerson David Todd:
David Todd Emerson from Durham, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
#2 | 2012-06-21Methods of forming light emitting devices having current reducing structures
#3 | 2012-04-05Light emitting devices having roughened/reflective contacts and methods of fabricating same
#4 | 2012-01-26Group III nitride based quantum well light emitting device structures with an indium containing capping structure
#5 | 2011-01-13Methods of forming light emitting devices having current reducing structures
#6 | 2010-06-03Group III nitride based quantum well light emitting device structures with an indium containing capping structure
#7 | 2009-10-08Light emitting devices having roughened/reflective contacts and methods of fabricating same
#8 | 2009-01-29Methods of forming light emitting devices with active layers that extend into opened pits
#9 | 2008-09-11Light emitting devices having a roughened reflective bond pad and methods of fabricating light emitting devices having roughened reflective bond pads
#10 | 2008-09-11Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
#11 | 2008-02-14Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
#12 | 2007-06-28LIGHT EMITTING DEVICES HAVING CURRENT BLOCKING STRUCTURES AND METHODS OF FABRICATING LIGHT EMITTING DEVICES HAVING CURRENT BLOCKING STRUCTURES
#13 | 2006-11-02Light emitting devices with active layers that extend into opened pits
#14 | 2006-02-02Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
#15 | 2005-10-25Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
#16 | 2005-10-18Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
#17 | 2005-06-14Group III nitride LED with undoped cladding layer and multiple quantum well
#18 | 2005-03-17Group III nitride based quantum well light emitting device structures with an indium containing capping structure
#19 | 2005-03-03Group III nitride based superlattice structures
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