Inventor profile of:

Manfred Schiekofer

City:

Freising

Country:

Germany

Published Applications:

11

Last publication date:

2012-02-09

Top Assignees for applications by Manfred Schiekofer

The entities that hold a legal rights for patent applications filed by inventor Schiekofer Manfred:

Recent patent applications by Schiekofer Manfred

Manfred Schiekofer from Freising, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-02-09
US20120035768A1
Chemistry; metallurgy

Controlling an epitaxial growth process in an epitaxial reactor

#2 | 2011-03-03
US20110049517A1
Electricity

Bipolar transistor

#3 | 2010-12-09
US20100308416A1
Electricity

Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protection

#4 | 2010-11-04
US20100279481A1
Electricity

Control of dopant diffusion from buried layers in bipolar integrated circuits

#5 | 2010-09-30
US20100244184A1
Electricity

Method of forming an electrical contact between a support wafer and the surface of a top silicon layer of a silicon-on-insulator wafer and an electrical device including such an electrical contact

#6 | 2008-10-16
US20080251007A1
Chemistry; metallurgy

Method of controlling an epitaxial growth process in an epitaxial reactor

#7 | 2007-03-15
US20070057281A1
Electricity

Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protection

#8 | 2005-11-10
US20050250289A1
Electricity

Control of dopant diffusion from buried layers in bipolar integrated circuits

#9 | 2005-06-02
US20050118771A1
Electricity

Control of phosphorus profile by carbon in-situ doping for high performance vertical PNP transistor

#10 | 2005-05-12
US20050098093A1
Chemistry; metallurgy

Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer

#11 | 2005-01-20
US20050014341A1
Electricity

Method of fabricating complementary bipolar transistors with SiGe base regions

InventorID:

3095569 ⎘