Li Wang

City:

Jiangxi

Country:

China

Published Applications:

Last publication date:

2012-02-16

Top Assignees for applications by Li Wang

The entities that hold a legal rights for patent applications filed by inventor Wang Li:

LATTICE POWER (JIANGXI) CORPORATION 7 Nanchang, Jiangxi, China
Lattice Power (JIANGXI) Corporation 3 Nanchang, China
LATTICE POWER (JIANGXI) CORPORATION 2 Nanchang, Jiang Xi, China

Recent patent applications by Wang Li

Li Wang from Jiangxi, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-02-16

US20120037883A1

Electricity

Semiconductor light-emitting devices for generating arbitrary color

#2 | 2011-12-08

US20110298005A1

Electricity

METHOD FOR FABRICATING AN N-TYPE SEMICONDUCTOR MATERIAL USING SILANE AS A PRECURSOR

#3 | 2011-10-20

US20110253972A1

Electricity

LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILM

#4 | 2011-06-23

US20110147704A1

Electricity

SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION LAYER

#5 | 2011-06-16

US20110143467A1

Electricity

Method for fabricating InGaAlN light emitting device on a combined substrate

#6 | 2011-06-16

US20110140081A1

Electricity

METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION

#7 | 2011-06-16

US20110140080A1

Electricity

Method for fabricating InGaAIN light-emitting diodes with a metal substrate

#8 | 2011-06-09

US20110133159A1

Electricity

SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION IN P-TYPE LAYER

#9 | 2011-06-09

US20110133158A1

Electricity

METHOD FOR FABRICATING INGAN-BASED MULTI-QUANTUM WELL LAYERS

InventorID:

3097713 ⎘