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Inventor profile of:

Weize XIONG

City:

Plano, Texas

Country:

United States

Published Applications:

9

Last publication date:

2012-11-08

Top Assignees for applications by Weize XIONG

The entities that hold a legal rights for patent applications filed by inventor XIONG Weize:

  • TEXAS INSTRUMENTS INCORPORATED 9 Dallas, TX United States

Recent patent applications by XIONG Weize

Weize XIONG from Plano, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-11-08
US20120280324A1
Electricity

SRAM STRUCTURE AND PROCESS WITH IMPROVED STABILITY

#2 | 2012-05-17
US20120119824A1
Physics

BIAS VOLTAGE SOURCE

#3 | 2012-05-03
US20120108027A1
Electricity

Silicide method

#4 | 2012-02-23
US20120045874A1
Electricity

CMOS integration method for optimal IO transistor V

#5 | 2011-03-24
US20110070703A1
Electricity

Disposable spacer integration with stress memorization technique and silicon-germanium

#6 | 2010-03-04
US20100052025A1
Electricity

SOI MuGFETs having single gate electrode level

#7 | 2009-10-08
US20090253253A1
Electricity

Method of adjusting FDSOI threshold voltage through oxide charges generation in the buried oxide

#8 | 2009-04-16
US20090098702A1
Electricity

Method to Form CMOS Circuits Using Optimized Sidewalls

#9 | 2009-04-16
US20090096055A1
Electricity

METHOD TO FORM CMOS CIRCUITS WITH SUB 50NM STI STRUCTURES USING SELECTIVE EPITAXIAL SILICON POST STI ETCH

InventorID:

3104905 ⎘

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