Northfield, Minnesota
United States
23
2021-08-26
The entities that hold a legal rights for patent applications filed by inventor Larson John M.:
John M. Larson from Northfield, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Anisotropic iron nitride permanent magnets
#2 | 2012-03-08DYNAMIC SCHOTTKY BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE
#3 | 2011-02-10Method of manufacturing a CMOS device with zero soft error rate
#4 | 2010-08-26Metal source and drain transistor having high dielectric constant gate insulator
#5 | 2010-02-04SCHOTTKY BARRIER INTEGRATED CIRCUIT
#6 | 2010-01-21Dynamic Schottky barrier MOSFET device and method of manufacture
#7 | 2010-01-21Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate
#8 | 2010-01-14Schottky barrier CMOS device and method
#9 | 2008-04-03Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate
#10 | 2007-04-12CMOS device with zero soft error rate
#11 | 2007-02-01Dynamic Schottky barrier MOSFET device and method of manufacture
#12 | 2007-01-11Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
#13 | 2006-11-02Short-channel Schottky-barrier MOSFET device and manufacturing method
#14 | 2006-10-26Schottky barrier MOSFET device and circuit
#15 | 2006-04-13Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
#16 | 2005-12-29Schottky barrier CMOS device and method
#17 | 2005-12-13Schottky barrier CMOS fabrication method
#18 | 2005-09-27Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate
#19 | 2005-06-30Dynamic schottky barrier MOSFET device and method of manufacture
#20 | 2005-06-02Schottky-barrier mosfet manufacturing method using isotropic etch process
#21 | 2005-05-19Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate
#22 | 2005-05-19Schottky barrier integrated circuit
#23 | 2005-01-06Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate
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