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Inventor profile of:

Michael Iza

City:

Santa Barbara, California

Country:

United States

Published Applications:

Last publication date:

2012-06-28

Top Assignees for applications by Michael Iza

The entities that hold a legal rights for patent applications filed by inventor Iza Michael:

The Regents of the University of California 14 Oakland, CA United States
JAPAN SCIENCE AND TECHNOLOGY AGENCY 3 Saitama Prefecture, Japan
JAPAN SCIENCE AND TECHNOLOGY AGENCY 2 Kawaguchi City, Japan
Japan Science and Technology Agency 1 Kawaguchi, Saitama, Japan

Recent patent applications by Iza Michael

Michael Iza from Santa Barbara, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-06-28

US20120161287A1

Chemistry; metallurgy

METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION

#2 | 2012-05-03

US20120104411A1

Electricity

TEXTURED III-V SEMICONDUCTOR

#3 | 2012-03-29

US20120074525A1

Electricity

Miscut semipolar optoelectronic device

#4 | 2010-09-02

US20100219416A1

Electricity

Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates

#5 | 2010-08-12

US20100199914A1

Chemistry; metallurgy

CHEMICAL VAPOR DEPOSITION REACTOR CHAMBER

#6 | 2010-06-24

US20100155778A1

Electricity

Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

#7 | 2010-06-17

US20100148195A1

Electricity

Miscut semipolar optoelectronic device

#8 | 2009-07-23

US20090184342A1

Electricity

Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

#9 | 2009-03-19

US20090072262A1

Electricity

(Al,In,Ga,B)N device structures on a patterned substrate

#10 | 2008-11-20

US20080283854A1

Electricity

LIGHT EMITTING DIODE DEVICE LAYER STRUCTURE USING AN INDIUM GALLIUM NITRIDE CONTACT LAYER

#11 | 2008-10-16

US20080251802A1

Electricity

METHOD FOR DEPOSITION OF (Al,In,Ga,B)N

#12 | 2008-02-21

US20080042121A1

Electricity

Method for deposition of magnesium doped (Al, In, Ga, B)N layers

#13 | 2007-09-20

US20070218703A1

Electricity

Method for improved growth of semipolar (Al,In,Ga,B)N

#14 | 2007-09-20

US20070218655A1

Electricity

Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

#15 | 2007-08-16

US20070190758A1

Electricity

Method for conductivity control of (Al,In,Ga,B)N

InventorID:

3129692 ⎘