Rochester, Minnesota
United States
16
2013-07-11
The entities that hold a legal rights for patent applications filed by inventor Nelson Daniel Mark:
Daniel Mark Nelson from Rochester, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Layout to minimize FET variation in small dimension photolithography
#2 | 2012-04-12Data security for dynamic random access memory using body bias to clear data at power-up
#3 | 2012-04-05Delay chain burn-in for increased repeatability of physically unclonable functions
#4 | 2010-08-26Implementing boosted wordline voltage in memories
#5 | 2010-07-29Implementing enhanced SRAM stability and enhanced chip yield with configurable wordline voltage levels
#6 | 2010-02-25Implementing local evaluation of domino read SRAM with enhanced SRAM cell stability with minimized area usage
#7 | 2010-02-25Implementing local evaluation of domino read SRAM with enhanced SRAM cell stability
#8 | 2010-01-28Low power level shifting latch circuits with gated feedback for high speed integrated circuits
#9 | 2009-12-31High performance read bypass test for SRAM circuits
#10 | 2009-05-07Apparatus for implementing SRAM cell write performance evaluation
#11 | 2009-03-05Design structure embodied in a machine readable medium for implementing SRAM cell write performance evaluation
#12 | 2009-03-05Method for implementing SRAM cell write performance evaluation
#13 | 2008-11-06ENHANCED SRAM REDUNDANCY CIRCUIT FOR REDUCING WIRING AND REQUIRED NUMBER OF REDUNDANT ELEMENTS
#14 | 2008-05-15Method for reducing wiring and required number of redundant elements
#15 | 2008-05-15Method and Enhanced SRAM Redundancy Circuit for Reducing Wiring and Required Number of Redundant Elements
#16 | 2007-03-01Method and apparatus for implementing power saving for content addressable memory
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