Inventor profile of:

Kunal Vaed

City:

Poughkeepsie, New York

Country:

United States

Published Applications:

28

Last publication date:

2012-05-31

Top Assignees for applications by Kunal Vaed

The entities that hold a legal rights for patent applications filed by inventor Vaed Kunal:

Recent patent applications by Vaed Kunal

Kunal Vaed from Poughkeepsie, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-05-31
US20120133022A1
Electricity

Methods of fabricating passive element without planarizing and related semiconductor device

#2 | 2011-05-12
US20110108919A1
Electricity

METHOD OF FABRICATING A PRECISION BURIED RESISTOR

#3 | 2009-01-01
US20090004809A1
Electricity

Method of integration of a MIM capacitor with a lower plate of metal gate material formed on an STI region or a silicide region formed in or on the surface of a doped well with a high K dielectric material

#4 | 2008-11-27
US20080293233A1
Electricity

Post last wiring level inductor using patterned plate process

#5 | 2008-11-27
US20080293210A1
Electricity

Post last wiring level inductor using patterned plate process

#6 | 2008-11-27
US20080290458A1
Electricity

Post last wiring level inductor using patterned plate process

#7 | 2008-11-13
US20080277759A1
Electricity

Post last wiring level inductor using patterned plate process

#8 | 2008-11-06
US20080272458A1
Electricity

Post last wiring level inductor using patterned plate process

#9 | 2008-09-18
US20080224259A1
Electricity

Methods of fabricating passive element without planarizing and related semiconductor device

#10 | 2008-08-07
US20080185684A1
Electricity

METHOD AND STRUCTURE FOR INTEGRATING MIM CAPACITORS WITHIN DUAL DAMASCENE PROCESSING TECHNIQUES

#11 | 2008-07-24
US20080173981A1
Electricity

INTEGRATED CIRCUIT (IC) CHIP WITH ONE OR MORE VERTICAL PLATE CAPACITORS AND METHOD OF MAKING THE CAPACITORS

#12 | 2008-07-24
US20080173976A1
Electricity

Air gap under on-chip passive device

#13 | 2008-05-29
US20080122574A1
Electricity

Polysilicon containing resistor with enhanced sheet resistance precision and method for fabrication thereof

#14 | 2008-03-13
US20080064163A1
Electricity

Method and structure for integrating MIM capacitors within dual damascene processing techniques

#15 | 2008-03-06
US20080054393A1
Electricity

Methods of fabricating passive element without planarizing and related semiconductor device

#16 | 2008-01-03
US20080003759A1
Electricity

Methods of fabricating passive element without planarizing

#17 | 2007-11-29
US20070275533A1
Electricity

Semiconductor device structures with backside contacts for improved heat dissipation and reduced parasitic resistance

#18 | 2007-08-23
US20070194390A1
Electricity

Method of fabricating a precision buried resistor

#19 | 2007-07-05
US20070152332A1
Electricity

SINGLE OR DUAL DAMASCENE VIA LEVEL WIRINGS AND/OR DEVICES, AND METHODS OF FABRICATING SAME

#20 | 2007-03-15
US20070057343A1
Electricity

Integration of a MIM capacitor with a plate formed in a well region and with a high-k dielectric

#21 | 2007-02-08
US20070029587A1
Electricity

MOS varactor with segmented gate doping

#22 | 2007-02-01
US20070026659A1
Electricity

Post last wiring level inductor using patterned plate process

#23 | 2006-11-30
US20060270247A1
Electricity

Hi-K dielectric layer deposition methods

#24 | 2006-09-07
US20060197119A1
Electricity

Suspended transmission line structures in back end of line processing

#25 | 2006-01-31
US10319724
-

Damascene integration scheme for developing metal-insulator-metal capacitors

#26 | 2005-11-03
US20050245063A1
Electricity

Method of forming suspended transmission line structures in back end of line processing

#27 | 2005-09-06
US10249550
-

Prevention of Ta2O5 mim cap shorting in the beol anneal cycles

#28 | 2005-03-24
US20050062137A1
Electricity

Vertically-stacked co-planar transmission line structure for IC design

InventorID:

3178712 ⎘