Inventor profile of:

Chang-Beom Eom

City:

Madison, Wisconsin

Country:

United States

Published Applications:

26

Last publication date:

2026-05-21

Top Assignees for applications by Chang-Beom Eom

The entities that hold a legal rights for patent applications filed by inventor Eom Chang-Beom:

Recent patent applications by Eom Chang-Beom

Chang-Beom Eom from Madison, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-05-21
US20260139406A1
Chemistry; metallurgy

HETEROSTRUCTURES WITH SCANDATE METAL OXIDE AND POTASSIUM TANTALATE LAYERS

#2 | 2026-03-26
US20260085447A1
Chemistry; metallurgy

FABRICATION OF LARGE AND POLYMER-FREE COMPLEX OXIDE AND COMPLEX NITRIDE MEMBRANES ASSISTED BY ISOLATED METAL ISLANDS

#3 | 2026-02-12
US20260047348A1
Electricity

SEMICONDUCTOR DEVICE WITH OXIDE-BASED HETEROSTRUCTURE AND METHOD FOR THE SAME

#4 | 2024-10-17
US20240345338A1
Physics

MAGNETIC-FIELD-TUNABLE TERAHERTZ OPTOELECTRONIC TRANSDUCER

#5 | 2024-07-11
US20240229292A1
Chemistry; metallurgy

Hybrid pulsed laser deposition of complex oxide thin films made from elements having a large vapor pressure mismatch

#6 | 2023-06-08
US20230175169A1
Chemistry; metallurgy

Low-defect-density gamma phase aluminum oxide substrates for heteroepitaxial synthesis

#7 | 2022-11-17
US20220367184A1
Electricity

Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films

#8 | 2021-09-09
US20210280772A1
Electricity

Spin transistors based on voltage-controlled magnon transport in multiferroic antiferromagnets

#9 | 2021-08-05
US20210242394A1
Electricity

MAGNETOELECTRIC HETEROSTRUCTURES AND RELATED ARTICLES, SYSTEMS, AND METHODS

#10 | 2020-11-19
US20200365403A1
Electricity

Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films

#11 | 2020-10-22
US20200335690A1
Electricity

Anisotropic strain-driven magnetoelectric devices

#12 | 2020-07-23
US20200234953A1
Electricity

Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films

#13 | 2020-06-25
US20200203601A1
Electricity

Non-collinear antiferromagnets for high density and low power spintronics devices

#14 | 2019-05-23
US20190155063A1
Physics

Vanadium dioxide-based optical and radiofrequency switches

#15 | 2019-01-03
US20190006581A1
Electricity

Magnetic memory devices based on 4D and 5D transition metal perovskites

#16 | 2018-11-22
US20180337238A1
Electricity

Oxide heterostructures having spatially separated electron-hole bilayers

#17 | 2018-11-15
US20180331188A1
Electricity

Vanadium dioxide heterostructures having an isostructural metal-insulator transition

#18 | 2018-09-13
US20180259796A1
Physics

Vanadium dioxide-based optical and radiofrequency switches

#19 | 2018-05-03
US20180122910A1
Electricity

High quality vanadium dioxide films

#20 | 2017-06-15
US20170167012A1
Chemistry; metallurgy

OFF-AXIS MAGNETRON SPUTTERING WITH REAL-TIME REFLECTION HIGH ENERGY ELECTRON DIFFRACTION ANALYSIS

#21 | 2017-04-18
US14974178
Electricity

Epitaxial growth of high quality vanadium dioxide films with template engineering

#22 | 2013-12-12
US20130327634A1
Chemistry; metallurgy

MISALIGNED SPUTTERING SYSTEMS FOR THE DEPOSITION OF COMPLEX OXIDE THIN FILMS

#23 | 2013-07-04
US20130168233A1
Chemistry; metallurgy

APPARATUS AND METHODS FOR HETEROEPITAXIAL GROWTH USING PULSED LASER AND SPUTTERING DEPOSITION WITH REAL-TIME, IN SITU RHEED IMAGING

#24 | 2009-11-12
US20090280355A1
Chemistry; metallurgy

Epitaxial (001) BiFeOmembranes with substantially reduced fatigue and leakage

#25 | 2006-12-28
US20060288928A1
Chemistry; metallurgy

Perovskite-based thin film structures on miscut semiconductor substrates

#26 | 2006-05-04
US20060091434A1
Electricity

Strain-engineered ferroelectric thin films

InventorID:

318509 ⎘