Xia An

MULTI-GATE TOTAL IONIZING DOSE (TID) RADIATION-HARDENED DEVICE

Method for characterizing fluctuation induced by single particle irradiation in a device and application thereof

Preparation method of a germanium-based schottky junction

Radiation-hardened-by-design (RHBD) multi-gate device

METHOD FOR SEPARATING THRESHOLD VOLTAGE SHIFTS CAUSED BY TWO EFFECTS IN SOI DEVICE

Method for processing gate dielectric layer deposited on germanium-based or group III-V compound-based substrate

Method for isolating active regions in germanium-based MOS device

RADIATION RESISTANT CMOS DEVICE AND METHOD FOR FABRICATING THE SAME

Ge-based NMOS device and method for fabricating the same

Interface treatment method for germanium-based device

CMOS device for reducing charge sharing effect and fabrication method thereof

CMOS device for reducing radiation-induced charge collection and method for fabricating the same

Method for predicting reliable lifetime of SOI mosfet device

GERMANIUM-BASED NMOS DEVICE AND METHOD FOR FABRICATING THE SAME

Strained channel field effect transistor and the method for fabricating the same

METHOD FOR OBTAINING DISTRIBUTION OF CHARGES ALONG CHANNEL IN MOS TRANSISTOR

FABRICATION METHOD OF GERMANIUM-BASED N-TYPE SCHOTTKY FIELD EFFECT TRANSISTOR

SURFACE TREATMENT METHOD FOR GERMANIUM BASED DEVICE

Method for fabricating semiconductor nano circular ring

Semiconductor device and method for fabricating the same

Method for introducing channel stress and field effect transistor fabricated by the same