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Inventor profile of:

Benjamin A. Haskell

City:

Santa Barbara, California

Country:

United States

Published Applications:

Last publication date:

2014-07-03

Top Assignees for applications by Benjamin A. Haskell

The entities that hold a legal rights for patent applications filed by inventor Haskell Benjamin A.:

The Regents of the University of California 25 Oakland, CA United States
Japan Science and Technology Agency 6 Kawaguchi, Saitama Prefecture, Japan
JAPAN SCIENCE AND TECHNOLOGY AGENCY 6 Kawaguchi City, Japan
JAPAN SCIENCE AND TECHNOLOGY AGENCY 3 Saitama Prefecture, Japan
The Japan Science and Technology Agency 2 Kawaguchi, Saitama Prefecture, Japan
Japan Science and Technology Agency 1 Kawaguchi, Saitama, Prefecture, -
THE JAPAN SCIENCE AND TECHNOLOGY AGENCY 1 Kawaguchi City, Japan
THE JAPAN SCIENCE AND TECHNOLOGY CENTER 1 Kawaguchi City, Japan
Japan Science and Technology Agency 1 , Japan
Japan Science and Technology Center 1 Saitama Prefecture, Japan
Japan Science and Technology Agency 1 Kawaguchi, Saitama, Japan

Recent patent applications by Haskell Benjamin A.

Benjamin A. Haskell from Santa Barbara, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-07-03

US20140183579A1

Electricity

MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE

#2 | 2013-07-04

US20130168833A1

Electricity

METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION

#3 | 2012-05-17

US20120119222A1

Chemistry; metallurgy

Technique for the growth of planar semi-polar gallium nitride

#4 | 2012-03-29

US20120074525A1

Electricity

Miscut semipolar optoelectronic device

#5 | 2012-03-29

US20120074524A1

Electricity

LATERAL GROWTH METHOD FOR DEFECT REDUCTION OF SEMIPOLAR NITRIDE FILMS

#6 | 2012-03-29

US20120074425A1

Chemistry; metallurgy

GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE

#7 | 2011-11-17

US20110278585A1

Chemistry; metallurgy

GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE

#8 | 2011-08-11

US20110193094A1

Electricity

GROWTH OF PLANAR REDUCED DISLOCATION DENSITY M-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY

#9 | 2011-03-17

US20110062449A1

Electricity

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

#10 | 2010-12-23

US20100320475A1

Electricity

ETCHING TECHNIQUE FOR THE FABRICATION OF THIN (Al, In, Ga)N LAYERS

#11 | 2010-06-24

US20100155778A1

Electricity

Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

#12 | 2010-06-17

US20100148195A1

Electricity

Miscut semipolar optoelectronic device

#13 | 2010-06-03

US20100133663A1

Chemistry; metallurgy

Technique for the growth of planar semi-polar gallium nitride

#14 | 2009-07-23

US20090184342A1

Electricity

Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

#15 | 2009-06-11

US20090146162A1

Electricity

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

#16 | 2009-01-01

US20090001519A1

Chemistry; metallurgy

Growth of planar, non-polar, group-III nitride films

#17 | 2008-04-10

US20080083970A1

Chemistry; metallurgy

Method and materials for growing III-nitride semiconductor compounds containing aluminum

#18 | 2007-09-20

US20070218703A1

Electricity

Method for improved growth of semipolar (Al,In,Ga,B)N

#19 | 2007-09-20

US20070218655A1

Electricity

Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

#20 | 2007-08-09

US20070184637A1

Electricity

Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy

#21 | 2007-05-17

US20070111531A1

Chemistry; metallurgy

Technique for the growth of planar semi-polar gallium nitride

#22 | 2007-05-17

US20070111488A1

Electricity

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

#23 | 2007-04-26

US20070093073A1

Electricity

Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices

#24 | 2007-01-18

US20070015345A1

Electricity

Lateral growth method for defect reduction of semipolar nitride films

#25 | 2006-11-02

US20060246722A1

Electricity

Etching technique for the fabrication of thin (Al, In, Ga)N layers

#26 | 2006-10-19

US20060234486A1

Electricity

Wafer separation technique for the fabrication of free-standing (Al,In,Ga)N wafers

#27 | 2006-09-14

US20060205199A1

Chemistry; metallurgy

Technique for the growth of planar semi-polar gallium nitride

#28 | 2005-11-03

US20050245095A1

Chemistry; metallurgy

Growth of planar reduced dislocation density -plane gallium nitride by hydride vapor phase epitaxy

InventorID:

319512 ⎘