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Inventor profile of:

Siddharth Rajan

City:

Goleta, California

Country:

United States

Published Applications:

7

Last publication date:

2012-07-05

Top Assignees for applications by Siddharth Rajan

The entities that hold a legal rights for patent applications filed by inventor Rajan Siddharth:

The Regents of the University of California 4 Oakland, CA United States
GENERAL ELECTRIC COMPANY 3 Schenectady, NY United States
The Regents of the University of California Office of Technology Transfer 1 Oakland, CA United States
THE REGENTS OF THE UNIVERSITY OF CALIFONIA 1 Oakland, CA United States

Recent patent applications by Rajan Siddharth

Siddharth Rajan from Goleta, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-07-05

US20120171824A1

Heterostructure device and associated method

#2 | 2010-10-21

US20100264461A1

N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor

#3 | 2009-06-25

US20090159929A1

Heterostructure device and associated method

#4 | 2009-06-04

US20090140293A1

HETEROSTRUCTURE DEVICE AND ASSOCIATED METHOD

#5 | 2009-04-02

US20090085065A1

METHOD TO FABRICATE III-N SEMICONDUCTOR DEVICES ON THE N-FACE OF LAYERS WHICH ARE GROWN IN THE III-FACE DIRECTION USING WAFER BONDING AND SUBSTRATE REMOVAL

#6 | 2008-10-02

US20080237640A1

N-face high electron mobility transistors with low buffer leakage and low parasitic resistance

#7 | 2006-10-19

US20060231860A1

Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same

InventorID:

3209072 ⎘