Inventor profile of:

Shom Ponoth

City:

Fishkill, New York

Country:

United States

Published Applications:

21

Last publication date:

2012-07-26

Top Assignees for applications by Shom Ponoth

The entities that hold a legal rights for patent applications filed by inventor Ponoth Shom:

Recent patent applications by Ponoth Shom

Shom Ponoth from Fishkill, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-07-26
US20120190187A1
Electricity

Pad bonding employing a self-aligned plated liner for adhesion enhancement

#2 | 2011-07-07
US20110163446A1
Electricity

METHOD TO GENERATE AIRGAPS WITH A TEMPLATE FIRST SCHEME AND A SELF ALIGNED BLOCKOUT MASK AND STRUCTURE

#3 | 2010-06-17
US20100148366A1
Electricity

Grain growth promotion layer for semiconductor interconnect structures

#4 | 2009-12-17
US20090311859A1
Electricity

METHOD FOR ENABLING HARD MASK FREE INTEGRATION OF ULTRA LOW-K MATERIALS AND STRUCTURES PRODUCED THEREBY

#5 | 2009-06-18
US20090155996A1
Electricity

Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement

#6 | 2008-11-20
US20080284019A1
Electricity

Conductor-dielectric structure and method for fabricating

#7 | 2008-10-02
US20080242082A1
Electricity

Method for fabricating back end of the line structures with liner and seed materials

#8 | 2008-04-17
US20080090402A1
Electricity

DENSIFYING SURFACE OF POROUS DIELECTRIC LAYER USING GAS CLUSTER ION BEAM

#9 | 2008-01-31
US20080026541A1
Electricity

AIR-GAP INTERCONNECT STRUCTURES WITH SELECTIVE CAP

#10 | 2007-10-25
US20070249156A1
Electricity

METHOD FOR ENABLING HARD MASK FREE INTEGRATION OF ULTRA LOW-K MATERIALS AND STRUCTURES PRODUCED THEREBY

#11 | 2007-10-25
US20070246792A1
Electricity

Back end of the line structures with liner and noble metal layer

#12 | 2007-08-23
US20070197012A1
Electricity

Grain growth promotion layer for semiconductor interconnect structures

#13 | 2007-07-19
US20070166996A1
Electricity

Method of making a semiconductor structure with a plating enhancement layer

#14 | 2007-07-19
US20070166648A1
Physics

INTEGRATED LITHOGRAPHY AND ETCH FOR DUAL DAMASCENE STRUCTURES

#15 | 2007-06-28
US20070148826A1
Electricity

Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement

#16 | 2007-05-24
US20070117377A1
Electricity

Conductor-dielectric structure and method for fabricating

#17 | 2007-04-12
US20070080429A1
Electricity

Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement

#18 | 2007-03-01
US20070048981A1
Electricity

METHOD FOR PROTECTING A SEMICONDUCTOR DEVICE FROM CARBON DEPLETION BASED DAMAGE

#19 | 2006-08-17
US20060183315A1
Electricity

Method to create air gaps using non-plasma processes to damage ILD materials

#20 | 2006-08-17
US20060183062A1
Physics

Method to create region specific exposure in a layer

#21 | 2006-03-02
US20060043590A1
Electricity

Maintaining uniform CMP hard mask thickness

InventorID:

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