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Inventor profile of:

Isao Yoshida

City:

Hinode

Country:

Japan

Published Applications:

7

Last publication date:

2012-09-20

Top Assignees for applications by Isao Yoshida

The entities that hold a legal rights for patent applications filed by inventor Yoshida Isao:

  • RENESAS ELECTRONICS CORPORATION 3 Kanagawa, Japan
  • Renesas Technology Corp. 3 Tokyo, Japan

Recent patent applications by Yoshida Isao

Isao Yoshida from Hinode, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-09-20
US20120235250A1
Electricity

Semiconductor device including a power MISFET

#2 | 2011-09-15
US20110220999A1
Electricity

Semiconductor device including a power MISFET and method of manufacturing the same

#3 | 2010-02-25
US20100044793A1
Electricity

Semiconductor device having a plurality of misfets formed on a main surface of a semiconductor substrate

#4 | 2007-05-24
US20070114606A1
Electricity

Semiconductor device and a method of manufacturing the same

#5 | 2005-08-11
US20050173738A1
Electricity

Semiconductor device and manufacturing method of the same

#6 | 2005-01-27
US20050017296A1
Electricity

Power mosfet having conductor plug structured contacts

#7 | 2005-01-06
US20050003573A1
Electricity

Field-effect type semiconductor device for power amplifier

InventorID:

3257560 ⎘

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