ALBANY, New York
United States
7
2012-10-18
The entities that hold a legal rights for patent applications filed by inventor FALTERMEIER JOHNATHAN E.:
JOHNATHAN E. FALTERMEIER from ALBANY, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Device structure, layout and fabrication method for uniaxially strained transistors
#2 | 2011-10-20Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)
#3 | 2011-09-22High-K/metal gate CMOS finFET with improved pFET threshold voltage
#4 | 2011-07-21Device structure, layout and fabrication method for uniaxially strained transistors
#5 | 2011-05-12High-K/metal gate CMOS finFET with improved pFET threshold voltage
#6 | 2011-04-21Self-aligned patterned etch stop layers for semiconductor devices
#7 | 2010-08-19Highly scalable trench capacitor
3276536 ⎘