Inventor profile of:

Natalie B. Feilchenfeld

City:

Jericho, Vermont

Country:

United States

Published Applications:

31

Last publication date:

2018-07-19

Top Assignees for applications by Natalie B. Feilchenfeld

The entities that hold a legal rights for patent applications filed by inventor Feilchenfeld Natalie B.:

Recent patent applications by Feilchenfeld Natalie B.

Natalie B. Feilchenfeld from Jericho, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2018-07-19
US20180204761A1
Electricity

Lateral PiN diodes and schottky diodes

#2 | 2018-02-13
US15401281
Electricity

Structures with contact trenches and isolation trenches

#3 | 2017-10-24
US15635288
Electricity

Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure

#4 | 2017-09-19
US15232873
Electricity

Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure

#5 | 2016-12-22
US20160372582A1
Electricity

Device structures for a silicon-on-insulator substrate with a high-resistance handle wafer

#6 | 2016-06-30
US20160190269A1
Electricity

Tapered gate oxide in LDMOS devices

#7 | 2016-06-30
US20160190067A1
Electricity

Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related method

#8 | 2016-03-03
US20160064475A1
Electricity

Lateral PiN diodes and schottky diodes

#9 | 2016-02-11
US20160043202A1
Electricity

SELF-ALIGNED BIPOLAR JUNCTION TRANSISTOR HAVING SELF-PLANARIZING ISOLATION RAISED BASE STRUCTURES

#10 | 2015-12-03
US20150348870A1
Electricity

Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related method

#11 | 2015-09-10
US20150255539A1
Electricity

Dual shallow trench isolation (STI) structure for field effect transistor (FET)

#12 | 2014-11-27
US20140346597A1
Electricity

High voltage laterally diffused metal oxide semiconductor

#13 | 2014-11-13
US20140332927A1
Electricity

Self-aligned bipolar junction transistor having self-planarizing isolation raised base structures

#14 | 2014-11-06
US20140327084A1
Electricity

DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) AND METHODS OF FORMING

#15 | 2014-08-28
US20140239448A1
Electricity

Interdigitated capacitors with a zero quadratic voltage coefficient of capacitance or zero linear temperature coefficient of capacitance

#16 | 2013-11-14
US20130299938A1
Electricity

Isolated zener diode, an integrated circuit incorporating multiple instances of the zener diode, a method of forming the zener diode and a design structure for the zener diode

#17 | 2013-07-11
US20130175656A1
Electricity

Isolated Zener diode

#18 | 2012-12-20
US20120319233A1
Electricity

Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration

#19 | 2012-05-24
US20120126319A1
Electricity

Lateral diffusion field effect transistor with drain region self-aligned to gate electrode

#20 | 2011-03-17
US20110062548A1
Electricity

Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration

#21 | 2010-06-17
US20100149723A1
Electricity

Method and structure for creation of a metal insulator metal capacitor

#22 | 2010-05-13
US20100117122A1
Electricity

Optimized device isolation

#23 | 2009-10-22
US20090261426A1
Electricity

Lateral diffusion field effect transistor with drain region self-aligned to gate electrode

#24 | 2009-07-30
US20090193378A1
Physics

Modifying layout of IC based on function of interconnect and related circuit and design structure

#25 | 2009-06-04
US20090140343A1
Electricity

Lateral diffusion field effect transistor with a trench field plate

#26 | 2009-04-30
US20090108347A1
Electricity

Lateral diffusion field effect transistor with asymmetric gate dielectric profile

#27 | 2008-08-28
US20080203490A1
Electricity

Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration

#28 | 2008-01-24
US20080019077A1
Electricity

Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask

#29 | 2007-11-15
US20070262416A1
Electricity

Method and structure for creation of a metal insulator metal capacitor

#30 | 2005-12-08
US20050272219A1
Electricity

Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask

#31 | 2005-06-14
US10856503
-

Method to fabricate high-performance NPN transistors in a BiCMOS process

InventorID:

331351 ⎘