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Inventor profile of:

Amitava Bose

City:

Tempe, Arizona

Country:

United States

Published Applications:

Last publication date:

2017-10-17

Top Assignees for applications by Amitava Bose

The entities that hold a legal rights for patent applications filed by inventor Bose Amitava:

FREESCALE SEMICONDUCTOR, INC 31 Austin, TX United States
MOTOROLA, INC. 1 Schaumburg, IL United States
NXP USA, INC. 1 AUSTIN, TX United States
NORTH STAR INNOVATIONS INC. 1 Costa Mesa, CA United States
Freescale Semiconductor, Inc. 1 Schaumburg, IL United States

Recent patent applications by Bose Amitava

Amitava Bose from Tempe, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2017-10-17

US15271627

Performing operations; transporting

CMOS and pressure sensor integrated on a chip and fabrication method

#2 | 2011-02-03

US20110024813A1

Electricity

MOS capacitor structures

#3 | 2010-09-16

US20100230736A1

Electricity

High voltage deep trench capacitor

#4 | 2010-02-04

US20100025756A1

Electricity

Dual current path LDMOSFET with graded PBL for ultra high voltage smart power applications

#5 | 2009-10-27

US12125613

Robust deep trench isolation

#6 | 2009-07-09

US20090174030A1

Electricity

Methods for forming MOS capacitors

#7 | 2008-11-27

US20080293211A1

Electricity

High voltage deep trench capacitor

#8 | 2008-10-30

US20080265291A1

Electricity

MOSFET device including a source with alternating P-type and N-type regions

#9 | 2008-08-14

US20080191305A1

Electricity

Bipolar Schottky diode and method

#10 | 2008-08-14

US20080191275A1

Electricity

Dotted channel MOSFET and method

#11 | 2008-05-29

US20080124889A1

Electricity

Process of forming an electronic device including a conductive structure extending through a buried insulating layer

#12 | 2008-05-29

US20080122025A1

Electricity

Electronic device including a conductive structure extending through a buried insulating layer

#13 | 2008-05-15

US20080113498A1

Electricity

Variable resurf semiconductor device and method

#14 | 2008-04-03

US20080079122A1

Electricity

Termination structures for super junction devices

#15 | 2007-09-27

US20070224738A1

Electricity

Semiconductor device with a multi-plate isolation structure

#16 | 2007-09-27

US20070221967A1

Electricity

Semiconductor device and method for forming the same

#17 | 2007-08-30

US20070200184A1

Electricity

Methods and apparatus for a stepped-drift MOSFET

#18 | 2007-08-30

US20070200136A1

Electricity

Isolated zener diodes

#19 | 2007-05-03

US20070096225A1

Electricity

Semiconductor device and method for forming the same

#20 | 2007-03-01

US20070045767A1

Electricity

Semiconductor devices employing poly-filled trenches

#21 | 2006-12-07

US20060273428A1

Electricity

Semiconductor device and method of manufacture

#22 | 2006-12-07

US20060273402A1

Electricity

Semiconductor device and method of manufacture

#23 | 2006-11-30

US20060267089A1

Electricity

Semiconductor device and method of manufacture

#24 | 2006-11-23

US20060261408A1

Electricity

Structure and method for RESURF LDMOSFET with a current diverter

#25 | 2006-11-23

US20060261382A1

Electricity

Structure and method for RESURF diodes with a current diverter

#26 | 2006-11-02

US20060246670A1

Electricity

Schottky device and method of forming

#27 | 2006-11-02

US20060244081A1

Electricity

Semiconductor device and method of forming the same

#28 | 2006-01-19

US20060014342A1

Electricity

Method of manufacturing a semiconductor component

#29 | 2006-01-05

US20060001057A1

Electricity

Schottky device and method of forming

#30 | 2005-12-29

US20050285188A1

Electricity

LDMOS transistor

#31 | 2005-12-15

US20050275055A1

Electricity

Schottky device

#32 | 2005-11-03

US20050245020A1

Electricity

Semiconductor device and method of forming the same

#33 | 2005-11-03

US20050242371A1

Electricity

High current MOS device with avalanche protection and method of operation

#34 | 2005-08-23

US10391040

Semiconductor component

#35 | 2005-08-16

US10369874

Method of manufacturing a semiconductor component

#36 | 2005-04-19

US10286169

Floating resurf LDMOSFET and method of manufacturing same

InventorID:

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