Inventor profile of:

Christopher S. Johnson

City:

Meridian, Idaho

Country:

United States

Published Applications:

38

Last publication date:

2018-06-28

Top Assignees for applications by Christopher S. Johnson

The entities that hold a legal rights for patent applications filed by inventor Johnson Christopher S.:

Recent patent applications by Johnson Christopher S.

Christopher S. Johnson from Meridian, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2018-06-28
US20180181464A1
Physics

Apparatuses and methods for selective determination of data error repair

#2 | 2017-12-07
US20170351570A1
Physics

Apparatuses and methods for selective determination of data error repair

#3 | 2014-05-08
US20140129869A1
Physics

Adjustable Byte Lane Offset For Memory Module to Reduce Skew

#4 | 2013-11-14
US20130305128A1
Physics

Method and apparatus for detecting communication errors on a bus

#5 | 2013-01-10
US20130013985A1
Physics

Method and apparatus for detecting communication errors on a bus

#6 | 2012-08-02
US20120198144A1
Physics

Dynamically setting burst length of double data rate memory device by applying signal to at least one external pin during a read or write transaction

#7 | 2012-03-29
US20120079358A1
Physics

Method and apparatus for detecting communication errors on a bus

#8 | 2012-02-23
US20120047388A1
Physics

Adjustable byte lane offset for memory module to reduce skew

#9 | 2012-01-05
US20120005420A1
Physics

Dynamically setting burst length of double data rate memory device by applying signal to at least one external pin during a read or write transaction

#10 | 2011-02-17
US20110038217A1
Physics

Memory device and method having low-power, high write latency mode and high-power, low write latency mode and/or independently selectable write latency

#11 | 2010-12-30
US20100332718A1
Physics

SYSTEM AND METHOD FOR PROVIDING CONFIGURABLE LATENCY AND/OR DENSITY IN MEMORY DEVICES

#12 | 2010-10-14
US20100262872A1
Physics

Method and apparatus for detecting communication errors on a bus

#13 | 2010-04-22
US20100097878A1
Physics

User selectable banks for DRAM

#14 | 2009-12-10
US20090307446A1
Physics

Dynamically setting burst length of double data rate memory device by applying signal to at least one external pin during a read or write transaction

#15 | 2009-11-05
US20090276548A1
Physics

Dynamically setting burst length of double data rate memory device by applying signal to at least one external pin during a read or write transaction

#16 | 2009-03-12
US20090067267A1
Physics

Memory device and method having low-power, high write latency mode and high-power, low write latency mode and/or independently selectable write latency

#17 | 2009-02-26
US20090055675A1
Physics

Adjustable byte lane offset for memory module to reduce skew

#18 | 2007-11-22
US20070268756A1
Physics

Memory device and method having low-power, high write latency mode and high-power, low write latency mode and/or independently selectable write latency

#19 | 2007-10-18
US20070242551A1
Physics

User selectable banks for DRAM

#20 | 2007-08-16
US20070189106A1
Physics

Selectable clock unit

#21 | 2007-04-10
US10781125
-

User selectable banks for DRAM

#22 | 2007-02-13
US10442789
-

Controlling multiple signal polarity in a semiconductor device

#23 | 2007-02-08
US20070033512A1
Physics

Method and apparatus for detecting communication errors on a bus

#24 | 2006-12-12
US10191290
-

Dynamically setting burst length of memory device by applying signal to at least one external pin during a read or write transaction

#25 | 2006-11-23
US20060262604A1
Physics

Controlling multiple signal polarity in a semiconductor device

#26 | 2006-11-09
US20060253721A1
Physics

Adjustable byte lane offset for memory module to reduce skew

#27 | 2006-07-13
US20060152983A1
Physics

Memory device and method having low-power, high write latency mode and high-power, low write latency mode and/or independently selectable write latency

#28 | 2006-05-25
US20060112231A1
Physics

Synchronous DRAM with selectable internal prefetch size

#29 | 2006-04-27
US20060090056A1
Physics

Dynamically setting burst length of memory device by applying signal to at least one external pin during a read or write transaction

#30 | 2006-03-23
US20060062056A1
Physics

Selectable clock input

#31 | 2006-01-24
US10747225
-

Selectable clock input

#32 | 2005-08-23
US10317429
-

Memory device and method having low-power, high write latency mode and high-power, low write latency mode and/or independently selectable write latency

#33 | 2005-06-09
US20050122797A1
Physics

Memory device and method having low-power, high write latency mode and high-power, low write latency mode and/or independently selectable write latency

#34 | 2005-06-02
US20050117414A1
Physics

Memory device and method having low-power, high write latency mode and high-power, low write latency mode and/or independently selectable write latency

#35 | 2005-05-17
US10133386
-

Synchronous DRAM with selectable internal prefetch size

#36 | 2005-04-21
US20050083758A1
Physics

Synchronous DRAM with selectable internal prefetch size

#37 | 2005-04-21
US20050083648A1
Electricity

Methods and apparatuses for transferring heat from microelectronic device modules

#38 | 2005-01-06
US20050002246A1
Electricity

Memory module with integrated bus termination

InventorID:

33574 ⎘