Inventor profile of:

Yu-Hsia Chen

City:

Mountain View, California

Country:

United States

Published Applications:

20

Last publication date:

2011-07-28

Top Assignees for applications by Yu-Hsia Chen

The entities that hold a legal rights for patent applications filed by inventor Chen Yu-Hsia:

Recent patent applications by Chen Yu-Hsia

Yu-Hsia Chen from Mountain View, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2011-07-28
US20110183158A1
Electricity

CPP structure with enhanced GMR ratio

#2 | 2011-07-28
US20110179635A1
Electricity

Method of manufacturing a CPP structure with enhanced GMR ratio

#3 | 2011-05-19
US20110117388A1
Physics

Multiple CCP layers in magnetic read head devices

#4 | 2010-12-23
US20100320076A1
Electricity

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

#5 | 2010-12-02
US20100304185A1
Electricity

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

#6 | 2010-02-18
US20100037453A1
Physics

Current confining layer for GMR device

#7 | 2010-01-28
US20100019333A1
Electricity

Low resistance tunneling magnetoresistive sensor with composite inner pinned layer

#8 | 2009-12-24
US20090314632A1
Electricity

FCC-like trilayer AP2 structure for CPP GMR EM improvement

#9 | 2008-12-04
US20080299679A1
Electricity

Low resistance tunneling magnetoresistive sensor with composite inner pinned layer

#10 | 2008-08-14
US20080192388A1
Physics

Uniformity in CCP magnetic read head devices

#11 | 2007-12-27
US20070297103A1
Physics

Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications

#12 | 2007-08-16
US20070188936A1
Physics

Method to form a current confining path of a CPP GMR device

#13 | 2007-06-28
US20070146928A1
Physics

Ultra thin seed layer for CPP or TMR structure

#14 | 2007-05-17
US20070111332A1
Electricity

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

#15 | 2007-04-12
US20070080381A1
Electricity

Robust protective layer for MTJ devices

#16 | 2007-03-29
US20070070556A1
Electricity

FCC-like trilayer AP2 structure for CPP GMR EM improvement

#17 | 2007-03-01
US20070047159A1
Physics

Magnetoresistive spin valve sensor with tri-layer free layer

#18 | 2007-01-18
US20070014054A1
Electricity

Method of manufacturing a CPP structure with enhanced GMR ratio

#19 | 2006-07-27
US20060165881A1
Chemistry; metallurgy

Ta based bilayer seed for IrMn CPP spin valve

#20 | 2006-07-27
US20060164765A1
Physics

Ta based bilayer seed for IrMn CPP spin valve

InventorID:

3386223 ⎘