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Inventor profile of:

Haiting Wang

City:

Hsinchu

Country:

Taiwan

Published Applications:

6

Last publication date:

2014-04-17

Top Assignees for applications by Haiting Wang

The entities that hold a legal rights for patent applications filed by inventor Wang Haiting:

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 4 Hsin-Chu, Taiwan
  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 2 Hsinchu, Taiwan
  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 2 , Taiwan
  • TAIWAN SEMICONDUCTOR MANUFATCURING COMPANY, LTD. 1 Hsin-Chu, Taiwan

Recent patent applications by Wang Haiting

Haiting Wang from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-04-17
US20140103454A1
Electricity

Lightly doped source/drain last method for dual-epi integration

#2 | 2013-12-19
US20130334617A1
Electricity

Gate structure having lightly doped region

#3 | 2011-12-01
US20110291201A1
Electricity

Multi-strained source/drain structures

#4 | 2011-09-15
US20110223752A1
Electricity

Method for fabricating a gate structure

#5 | 2011-08-11
US20110193179A1
Electricity

Lightly doped source/drain last method for dual-epi integration

#6 | 2011-06-23
US20110147765A1
Electricity

Dummy structure for isolating devices in integrated circuits

InventorID:

3407227 ⎘

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