Markus Nopper

Contact elements of semiconductor devices formed on the basis of a partially applied activation layer

Microstructure device including a metallization structure with self-aligned air gaps between closely spaced metal lines

Apparatus and method for removing bubbles from a process liquid

Reducing leakage in dielectric materials including metal regions including a metal cap layer in semiconductor devices

Metal cap layer of increased electrode potential for copper-based metal regions in semiconductor devices

Advanced automatic deposition profile targeting and control by applying advanced polish endpoint system feedback

Automatic deposition profile targeting

Semiconductor substrate having a protection layer at the substrate back side

SEMICONDUCTOR DEVICE COMPRISING A METALLIZATION LAYER STACK WITH A POROUS LOW-K MATERIAL HAVING AN ENHANCED INTEGRITY

Method of forming a metal layer over a patterned dielectric by wet chemical deposition including an electroless and a powered phase

TECHNIQUE FOR FORMING A COPPER-BASED METALLIZATION LAYER INCLUDING A CONDUCTIVE CAPPING LAYER

Method of reducing wafer contamination by removing under-metal layers at the wafer edge

Technique for metal deposition by electroless plating using an activation scheme including a substrate heating process

Method of reworking a semiconductor structure

Method and system for controlling a substrate position in an electrochemical process

Apparatus and method for removing bubbles from a process liquid

System and method for an increased bath lifetime in a single-use plating regime

Method of electroplating copper over a patterned dielectric layer to enhance process uniformity of a subsequent CMP process

Method of forming a metal layer over patterned dielectric by electroless deposition using a catalyst

Storage tank for process liquids with a reduced amount of bubbles