Inventor profile of:

James K. Schaeffer

City:

Austin, Texas

Country:

United States

Published Applications:

15

Last publication date:

2011-09-15

Top Assignees for applications by James K. Schaeffer

The entities that hold a legal rights for patent applications filed by inventor Schaeffer James K.:

Recent patent applications by Schaeffer James K.

James K. Schaeffer from Austin, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2011-09-15
US20110223756A1
Electricity

Method of enhancing photoresist adhesion to rare earth oxides

#2 | 2010-08-05
US20100197128A1
Electricity

CMOS integration with metal gate and doped high-K oxides

#3 | 2009-11-19
US20090286387A1
Electricity

Modulation of Tantalum-Based Electrode Workfunction

#4 | 2008-09-18
US20080224185A1
Electricity

Semiconductor device having a metal carbide gate with an electropositive element and a method of making the same

#5 | 2008-08-28
US20080206939A1
Electricity

Semiconductor device with integrated resistive element and method of making

#6 | 2008-01-03
US20080001202A1
Electricity

Method of making metal gate transistors

#7 | 2007-11-29
US20070272975A1
Electricity

Method of forming a semiconductor device having an interlayer and structure therefor

#8 | 2007-07-19
US20070166970A1
Electricity

ALD gate electrode

#9 | 2007-05-03
US20070096226A1
Electricity

MOSFET dielectric including a diffusion barrier

#10 | 2006-07-27
US20060166424A1
Electricity

Metal gate transistor CMOS process and method for making

#11 | 2006-03-21
US10969634
-

Method for forming a layer using a purging gas in a semiconductor process

#12 | 2005-12-15
US20050277296A1
Chemistry; metallurgy

Method to reduce impurity elements during semiconductor film deposition

#13 | 2005-12-15
US20050277294A1
Electricity

Method for treating a semiconductor surface to form a metal-containing layer

#14 | 2005-09-27
US10677070
-

Method for forming a semiconductor device structure a semiconductor layer

#15 | 2005-05-05
US20050095763A1
Electricity

Method of forming an NMOS transistor and structure thereof

InventorID:

3437611 ⎘