Inventor profile of:

Volker Dudek

City:

Brackenheim

Country:

Germany

Published Applications:

28

Last publication date:

2011-10-27

Top Assignees for applications by Volker Dudek

The entities that hold a legal rights for patent applications filed by inventor Dudek Volker:

Recent patent applications by Dudek Volker

Volker Dudek from Brackenheim, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2011-10-27
US20110260250A1
Electricity

Low leakage FINFETs

#2 | 2009-11-05
US20090273883A1
Electricity

Method and system for incorporating high voltage devices in an EEPROM

#3 | 2008-11-27
US20080290426A1
Electricity

DMOS DEVICE WITH SEALED CHANNEL PROCESSING

#4 | 2008-11-13
US20080278874A1
Electricity

Electrostatic discharge (ESD) protection structure and a circuit using the same

#5 | 2008-07-24
US20080173940A1
Electricity

REDUCED ELECTRIC FIELD DMOS USING SELF-ALIGNED TRENCH ISOLATION

#6 | 2007-11-15
US20070262376A1
Electricity

High-voltage field-effect transistor

#7 | 2007-10-11
US20070235779A1
Electricity

Lateral DMOS transistor and method for the production thereof

#8 | 2007-10-04
US20070228425A1
Electricity

Method and manufacturing low leakage MOSFETs and FinFETs

#9 | 2007-09-27
US20070221965A1
Electricity

DMOS device with sealed channel processing

#10 | 2007-09-06
US20070207589A1
Physics

REGISTRATION MARK WITHIN AN OVERLAP OF DOPANT REGIONS

#11 | 2007-08-09
US20070184599A1
Electricity

MOS transistor and method for producing a MOS transistor structure

#12 | 2007-05-31
US20070120190A1
Electricity

Electrostatic discharge (ESD) protection structure and a circuit using the same

#13 | 2007-04-26
US20070090432A1
Electricity

Method and system for incorporating high voltage devices in an EEPROM

#14 | 2007-03-01
US20070048959A1
Physics

Registration mark within an overlap of dopant regions

#15 | 2007-01-25
US20070018273A1
Electricity

Methods of forming reduced electric field DMOS using self-aligned trench isolation

#16 | 2006-12-14
US20060281291A1
Electricity

Method for manufacturing a metal-semiconductor contact in semiconductor components

#17 | 2006-12-14
US20060278923A1
Electricity

Integrated circuit and method for manufacturing an integrated circuit

#18 | 2006-11-16
US20060255387A1
Electricity

Integrated circuit having laterally dielectrically isolated active regions above an electrically contacted buried material, and method for producing the same

#19 | 2006-10-05
US20060220138A1
Electricity

ESD protection circuit with scalable current capacity and voltage capacity

#20 | 2006-10-05
US20060220064A1
Electricity

Method for manufacturing a bipolar transistor and bipolar transistor manufactured by the method

#21 | 2006-05-25
US20060110876A1
Electricity

MOS transistor with reduced kink effect and method for the manufacture thereof

#22 | 2006-02-09
US20060028901A1
Electricity

Circuit layout with active components and high breakdown voltage

#23 | 2005-08-04
US20050170571A1
Electricity

Method of producing active semiconductor layers of different thicknesses in an SOI wafer

#24 | 2005-08-04
US20050167779A1
Electricity

Process for manufacturing vertically insulated structural components on SOI material of various thickness

#25 | 2005-08-04
US20050167706A1
Electricity

MOS transistor and method for producing a MOS transistor structure

#26 | 2005-05-05
US20050095804A1
Electricity

Method of fabricating semiconductor components through implantation and diffusion in a semiconductor substrate

#27 | 2005-03-24
US20050064678A1
Electricity

Method of fabricating a semiconductor component with active regions separated by isolation trenches

#28 | 2005-03-24
US20050062102A1
Electricity

DMOS-transistor with lateral dopant gradient in drift region and method of producing the same

InventorID:

3461380 ⎘