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Inventor profile of:

Xiang Gao

City:

Edison, New Jersey

Country:

United States

Published Applications:

Last publication date:

2011-11-17

Top Assignees for applications by Xiang Gao

The entities that hold a legal rights for patent applications filed by inventor Gao Xiang:

Emcore Corporation 3 Albuquerque, NM United States
Lumination LLC 3 Cleveland, OH United States
GELCORE, LLC 2 Valley View, OH United States
IQE RF, LLC 1 Somerset, NJ United States
VELOX SEMICONDUCTOR CORPORATION 1 Somerset, NJ United States
Emcore Corporation 1 Somerset, NJ United States
LUMINATION LLC 1 Valley View, OH United States

Recent patent applications by Gao Xiang

Xiang Gao from Edison, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2011-11-17

US20110278644A1

Electricity

Group III-nitride enhancement mode field effect devices and fabrication methods

#2 | 2010-07-22

US20100181584A1

Electricity

LASER LIFT-OFF WITH IMPROVED LIGHT EXTRACTION

#3 | 2009-09-17

US20090230497A1

Electricity

PIN diode structure with zinc diffusion region

#4 | 2009-06-18

US20090155958A1

Performing operations; transporting

ROBUST DIE BONDING PROCESS FOR LED DIES

#5 | 2008-05-29

US20080121902A1

Electricity

Small footprint high power light emitting package with plurality of light emitting diode chips

#6 | 2008-03-13

US20080061312A1

Electricity

Underfill for light emitting device

#7 | 2008-02-14

US20080035947A1

Electricity

Surface Mount Light Emitting Chip Package

#8 | 2007-08-30

US20070202623A1

Electricity

Wafer level package for very small footprint and low profile white LED devices

#9 | 2007-06-28

US20070145379A1

Electricity

Optimized contact design for thermosonic bonding of flip-chip devices

#10 | 2007-01-04

US20070004088A1

Electricity

Laser separation of encapsulated submount

#11 | 2006-09-14

US20060202223A1

Electricity

Increased light extraction from a nitride LED

#12 | 2006-04-13

US20060076589A1

Electricity

PIN photodiode structure and fabrication process for reducing dielectric delamination

#13 | 2006-03-23

US20060060933A1

Electricity

PIN diode structure with zinc diffusion region

#14 | 2006-02-09

US20060030125A1

Electricity

Laser separation of encapsulated submount

#15 | 2005-10-13

US20050225973A1

Electricity

LED with series-connected monolithically integrated mesas

#16 | 2005-08-18

US20050179104A1

Electricity

Lateral conduction Schottky diode with plural mesas

InventorID:

3475357 ⎘