Boris N. Feigelson

Quantum-Grade Nanodiamonds and Related Methods

DIFFUSION SUPPRESSION IN HIGH-TEMPERATURE ANNEALING OF NITRIDES

Temperature Cycling Method for Atomic Layer Deposition on High-Aspect-Ratio and High-Surface-Area Substrates

Methods of Forming Bipolar Nanocomposite Semiconductor Materials

High-Temperature Material Processing In The Absence Of Hydrogen

High-Temperature Material Processing In The Absence Of Hydrogen

Methods of Forming WBG and UWBG Semiconductors with P- and N-type Conductivity

Diamond-Capped Gallium Oxide Transistor

Diamond-Capped Gallium Oxide Transistor

Bipolar nanocomposite semiconductors

Bipolar nanocomposite semiconductors

GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same

Thermoelectric nanocomposite materials

Thermoelectric Nanocomposite Materials

WBG and UWBG semiconductor with p- and n-type conductivity and process for making the same

Thermoelectric nanocomposite materials

GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabricating Devices Incorporating the Same

GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same

GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabricating Devices Incorporating the Same

3D Printed Susceptor for Rapid Indirect RF Heating

GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same

Thermionic tungsten/scandate cathodes and method of making the same

Implanted dopant activation for wide bandgap semiconductor electronics

Nanocrystalline alpha alumina and method for making the same

Nanocrystalline alpha alumina and method for making the same

Transparent nanocomposite ceramics built from core/shell nanoparticles

Thermionic tungsten/scandate cathodes and methods of making the same

Defects annealing and impurities activation in semiconductors at thermodynamically non-stable conditions

Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing

Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphology

Bulk monolithic nano-heterostructures and method of making the same

Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperature

Defects annealing and impurities activation in III-nitride compound

GaN whiskers and methods of growing them from solution

Method of growing group III nitride crystals

Method of growing group III nitride crystals