Miyagi
Japan
37
2016-03-17
The entities that hold a legal rights for patent applications filed by inventor Ohba Kazuhiro:
Kazuhiro Ohba from Miyagi, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
Memory component, memory device, and method of operating memory device
#2 | 2015-11-19Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating same
#3 | 2015-03-12Method of making memory element with ion source layer comprised of two or more unit IO source layers
#4 | 2014-12-25Memory element and memory device
#5 | 2014-07-03Memory component, memory device, and method of operating memory device
#6 | 2014-07-03Memory element and memory device
#7 | 2014-06-05Target, method for producing the same, memory, and method for producing the same
#8 | 2014-03-27Memory component including an ion source layer and a resistance change layer, and a memory device using the same
#9 | 2013-09-19Memory component, memory device, and method of operating memory device
#10 | 2013-01-03Memory element with ion source layer and memory device
#11 | 2013-01-03Memory element having ion source layers with different contents of a chalcogen element
#12 | 2012-12-13Memory element and memory device
#13 | 2012-11-22Memory element and memory device with ion source layer and resistance change layer
#14 | 2012-09-20Memory element and memory device
#15 | 2012-08-30Memory element and memory device
#16 | 2011-08-11Memory component, memory device, and method of operating memory device
#17 | 2011-07-21Memory component and memory device
#18 | 2011-06-30Memory element and memory device
#19 | 2011-06-16Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating same
#20 | 2011-02-03TARGET, METHOD FOR PRODUCING THE SAME, MEMORY, AND METHOD FOR PRODUCING THE SAME
#21 | 2010-08-05Memory element and memory device
#22 | 2009-02-12Memory element and memory device
#23 | 2008-01-10Magnetoresistive effect element and magnetic memory device
#24 | 2008-01-01Magnetoresistive effect element and magnetic memory device
#25 | 2007-08-28Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
#26 | 2006-08-24Magnetoresistive effect element, magentic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device
#27 | 2006-06-15Magnetoresistant device and magnetic memory device further comments
#28 | 2006-06-01Magnetic storage device with intermediate layers having different sheet resistivities
#29 | 2006-04-25Magnetoresistive effect element and magnetic memory device
#30 | 2006-04-11Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device
#31 | 2005-07-28Magnetoresistive effect element and magnetic memory device
#32 | 2005-07-28Magnetoresistive effect element and magnetic memory device
#33 | 2005-07-21Magnetoresistive element and magnetic memory unit
#34 | 2005-07-21Magnetoresistive element and magnetic memory unit
#35 | 2005-05-10Solid electrolyte battery with porous members between exposed current collectors and method for manufacturing same
#36 | 2005-04-12Magnetoresistive element and magnetic memory unit
#37 | 2005-04-12Magnetoresistive device and magnetic memory device
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