Scott E. Sills

VERTICAL DIGIT LINES WITH ALTERNATING EPITAXIAL SILICON FOR HORIZONTAL ACCESS DEVICES IN 3D MEMORY

MULTIPLE, ALTERNATING EPITAXIAL SILICON FOR HORIZONTAL ACCESS DEVICES IN VERTICAL THREE DIMENSIONAL (3D) MEMORY

DIGIT LINE FORMATION IN VERTICAL THREE-DIMENSIONAL (3D) MEMORY

DOUBLE-SIDED STORAGE NODES IN TWO DIRECTIONS FOR THREE-DIMENSIONAL (3D) MEMORY

Memory Circuitry And Methods Used In Forming Memory Circuitry

Memory Circuitry And Methods Used In Forming Memory Circuitry

MULTI-SIDED STORAGE NODES IN THREE-DIMENSIONAL (3D) MEMORY

Transistors and Memory Arrays

Array Of Vertical Transistors And Method Used In Forming An Array Of Vertical Transistors

MEMORY DEVICES INCLUDING HETEROGENEOUS CHANNELS, AND RELATED ELECTRONIC SYSTEMS

SELF-ALIGNED CAPACITORS FOR THREE-DIMENSIONAL MEMORY SYSTEMS

MICROELECTRONIC DEVICE WITH THICK CONDUCTIVE STAIRCASED STEPS FOR 3D DRAM, AND RELATED SYSTEMS AND METHODS OF FORMATION

Elevationally-Extending Transistors, Devices Comprising Elevationally-Extending Transistors, and Methods of Forming a Device Comprising Elevationally-Extending Transistors

DEVICES INCLUDING OXIDE SEMICONDUCTOR STRUCTURES, AND RELATED ELECTRONIC SYSTEMS

CRYSTALLINE SPINEL INDIUM-GALLIUM-ZINC-OXIDE CHANNEL

VERTICALLY-ARRANGED GATE ALL AROUND TRANSISTORS HAVING UNIFORM CELL CONTACT LIGHTLY-DOPED DRAIN REGIONS

DOPING TECHNIQUES FOR MEMORY CELL SELECTION TRANSISTORS

MULTI-LAYER CAPACITORS FOR THREE-DIMENSIONAL MEMORY SYSTEMS

SEMICONDUCTOR DEVICE WITH LINED CAPACITOR AND METHODS FOR MANUFACTURING THE SAME

Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies

LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING

Integrated Assemblies and Methods of Forming Integrated Assemblies

2-TRANSISTOR MEMORY CELL AND GATE STRUCTURE HAVING MULTIPLE PORTIONS

MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, AND ELECTRONIC SYSTEMS

HYBRID GATE DIELECTRIC ACCESS DEVICE FOR VERTICAL THREE-DIMENSIONAL MEMORY

TWIN CHANNEL ACCESS DEVICE FOR VERTICAL THREE-DIMENSIONAL MEMORY

Solid state lights with cooling structures

VERTICAL DIGIT LINES WITH ALTERNATING EPITAXIAL SILICON FOR HORIZONTAL ACCESS DEVICES IN 3D MEMORY

SUPPORT PILLARS WITH MULTIPLE, ALTERNATING EPITAXIAL SILICON FOR HORIZONTAL ACCESS DEVICES IN VERTICAL

Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies

FABRICATION METHOD OF A LATERAL 3D MEMORY DEVICE

SUPPORT STRUCTURE FOR MULTIPLE, ALTERNATING EPITAXIAL SILICON

MULTIPLE, ALTERNATING EPITAXIAL SILICON FOR HORIZONTAL ACCESS DEVICES IN VERTICAL THREE DIMENSIONAL (3D) MEMORY

ANTIMONY-GALLIUM-ZINC-OXIDE MATERIALS

Solid state lights with cooling structures

Transistors and memory arrays

Devices including heterogeneous channels, and related memory devices, electronic systems, and methods

Array Of Vertical Transistors And Method Used In Forming An Array Of Vertical Transistors

Memory devices including oxide semiconductor

Integrated assemblies and methods of forming integrated assemblies

Integrated assemblies and methods of forming integrated assemblies

Integrated assemblies and methods of forming integrated assemblies

Devices including vertical transistors, and related methods

Memory devices including void spaces between transistor features, and related semiconductor devices and electronic systems

Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices

Solid state lights with cooling structures

Integrated Assemblies Having Semiconductor Oxide Channel Material, and Methods of Forming Integrated Assemblies

Epitaxial single crystalline silicon growth for a horizontal access device

Devices including control logic structures, and related methods

Integrated assemblies and methods of forming integrated assemblies

Integrated assemblies and methods of forming integrated assemblies

Epitaxial single crystalline silicon growth for memory arrays

Epitaxtal single crystalline silicon growth for a horizontal access device

Methods used in fabricating integrated circuitry and methods of forming 2T-1C memory cell arrays

Assemblies containing PMOS decks vertically-integrated with NMOS decks, and methods of forming integrated assemblies

Integrated assemblies and methods of forming integrated assemblies

Integrated assemblies and methods of forming integrated assemblies

Gate dielectric repair on three-node access device formation for vertical three-dimensional (3D) memory

Integrated assemblies and methods of forming integrated assemblies

SOURCE/DRAIN INTEGRATION IN A THREE-NODE ACCESS DEVICE FOR VERTICAL THREE DIMENSIONAL (3D) MEMORY

Storage node after three-node access device formation for vertical three dimensional (3D) memory

THREE-NODE ACCESS DEVICE FOR VERTICAL THREE DIMENSIONAL (3D) MEMORY

Channel integration in a three-node access device for vertical three dimensional (3D) memory

Transistors and memory arrays

Replacement gate dielectric in three-node access device formation for vertical three dimensional (3D) memory

Array of vertical transistors and method used in forming an array of vertical transistors

Control logic assemblies

Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors

Memory arrays and methods of forming an array of memory cells

Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies

Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material

Memory devices

LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING

Solid state lights with cooling structures

Devices including control logic structures, and related methods

Array of cross point memory cells

Memory cell structures

Devices, memory devices, and methods of forming devices

Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies

Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material

Control logic assemblies and methods of forming a control logic device

Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors

Memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry

Arrays of cross-point memory structures

Integrated assemblies having semiconductor oxide channel material, and methods of forming integrated assemblies

Devices, memory devices, and electronic systems

Devices, memory devices, and electronic systems

Methods of forming a semiconductor device

Devices including vertical transistors, and related methods and electronic systems

Devices and electronic systems including vertical transistors, and related methods

Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors

Transistors including heterogeneous channels

Device including a vertical transistor having a large band gap channel material and void spaces adjacent gate electrodes, and related methods and systems

Semiconductor devices, and related memory devices and electronic systems

Methods of forming resistive memory elements

Memory arrays and methods of forming an array of memory cells

Semiconductor devices comprising silver

Devices including control logic structures, electronic systems, and related methods

Apparatuses and memory devices including control logic levels, and related electronic systems

Memory cells and methods of forming memory cells