Chesterfield, Missouri
United States
15
2021-11-25
The entities that hold a legal rights for patent applications filed by inventor Ryu Jae Woo:
Jae Woo Ryu from Chesterfield, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
#2 | 2021-11-25Single crystal silicon ingot having axial uniformity
#3 | 2021-11-04CRYSTAL PULLING SYSTEM AND METHODS FOR PRODUCING MONOCRYSTALLINE INGOTS WITH REDUCED EDGE BAND DEFECTS
#4 | 2021-03-18Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
#5 | 2021-03-18Single crystal silicon ingot having axial uniformity
#6 | 2021-03-11Methods for forming single crystal silicon ingots with improved resistivity control
#7 | 2019-08-29Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield
#8 | 2019-05-09Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects
#9 | 2018-08-23Methods for producing low oxygen silicon ingots
#10 | 2018-06-28Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield
#11 | 2018-06-28Methods for forming single crystal silicon ingots with improved resistivity control
#12 | 2018-02-01METHODS FOR PRODUCING SINGLE CRYSTAL SILICON INGOTS WITH REDUCED SEED END OXYGEN
#13 | 2017-04-20Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects
#14 | 2016-04-21Methods for producing low oxygen silicon ingots
#15 | 2013-08-01QUALITATIVE CRYSTAL DEFECT EVALUATION METHOD
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