Poughkeepsie, New York
United States
23
2014-09-18
The entities that hold a legal rights for patent applications filed by inventor Wang Xinlin:
Xinlin Wang from Poughkeepsie, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Method and structure for pFET junction profile with SiGe channel
#2 | 2013-12-05Wrap-around fin for contacting a capacitor strap of a DRAM
#3 | 2013-08-01Structure and method for making low leakage and low mismatch NMOSFET
#4 | 2012-06-07Structure and method for Vt tuning and short channel control with high k/metal gate MOSFETs
#5 | 2012-04-19Method and structure for pFET junction profile with SiGe channel
#6 | 2011-07-21Structure and method for making low leakage and low mismatch NMOSFET
#7 | 2009-10-22Multilayer storage class memory using externally heated phase change material
#8 | 2009-08-27FIELD EFFECT TRANSISTOR WITH REDUCED OVERLAP CAPACITANCE
#9 | 2008-10-02Hybrid SOI/bulk semiconductor transistors
#10 | 2008-08-28Hybrid orientation SOI substrates, and method for forming the same
#11 | 2008-07-24Method of making double-gated self-aligned finFET having gates of different lengths
#12 | 2008-06-05MOSFET STRUCTURE WITH ULTRA-LOW K SPACER
#13 | 2008-04-17Hybrid SOI-bulk semiconductor transistors
#14 | 2008-01-31BORON DOPED SiGe HALO FOR NFET TO CONTROL SHORT CHANNEL EFFECT
#15 | 2007-11-01Hybrid orientation SOI substrates, and method for forming the same
#16 | 2007-08-09Structure and method of making double-gated self-aligned finFET having gates of different lengths
#17 | 2006-10-05MOSFET structure with ultra-low K spacer
#18 | 2006-09-28Connection device with actuating element for changing a conductive state of a via
#19 | 2006-05-11Circuit and method of controlling integrated circuit power consumption using phase change switches
#20 | 2006-02-23Apparatus and method for staircase raised source/drain structure
#21 | 2005-09-01Hybrid SOI/bulk semiconductor transistors
#22 | 2005-03-17Method of fabricating a connection device
#23 | 2005-03-03Thin channel FET with recessed source/drains and extensions
361287 ⎘