Ferdinando Bedeschi

Method for multilevel programming of phase change memory cells using adaptive reset pulses

Phase change memory device

Method of storing an indication of whether a memory location in phase change memory needs programming

Current mirror circuit, in particular for a non-volatile memory device

Phase-change memory device with discharge of leakage currents in deselected bitlines and method for discharging leakage currents in deselected bitlines of a phase-change memory device

Phase-change memory device with error correction capability

Semiconductor memory device with information loss self-detect capability

Nonvolatile phase change memory device and biasing method therefor

Fast reading, low consumption memory device and reading method thereof

Phase-change memory device with overvoltage protection and method for protecting a phase-change memory device against overvoltages

Bit line discharge control method and circuit for a semiconductor memory

Phase-change memory device with biasing of deselected bit lines

Writing circuit for a phase change memory device