Inventor profile of:

Simone Raoux

City:

Santa Clara, California

Country:

United States

Published Applications:

19

Last publication date:

2010-08-05

Top Assignees for applications by Simone Raoux

The entities that hold a legal rights for patent applications filed by inventor Raoux Simone:

Recent patent applications by Raoux Simone

Simone Raoux from Santa Clara, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2010-08-05
US20100193763A1
Performing operations; transporting

Current constricting phase change memory element structure

#2 | 2010-04-08
US20100084624A1
Electricity

Dielectric mesh isolated phase change structure for phase change memory

#3 | 2009-09-17
US20090230377A1
Electricity

Phase Change Materials for Applications that Require Fast Switching and High Endurance

#4 | 2009-08-27
US20090212274A1
Electricity

Phase change memory random access device using single-element phase change material

#5 | 2009-08-06
US20090194502A1
Performing operations; transporting

Amorphous nitride release layers for imprint lithography, and method of use

#6 | 2009-07-02
US20090169663A1
Physics

Amorphous oxide release layers for imprint lithography, and method of use

#7 | 2009-05-14
US20090121211A1
Electricity

Solution-based deposition process for metal chalcogenides

#8 | 2009-04-16
US20090095953A1
Physics

Phase change materials and associated memory devices

#9 | 2009-03-19
US20090072214A1
Physics

Phase-change memory cell and method of fabricating the phase-change memory cell

#10 | 2009-02-17
US12047459
-

Phase change materials for applications that require fast switching and high endurance

#11 | 2009-01-15
US20090014704A1
Performing operations; transporting

Current constricting phase change memory element structure

#12 | 2008-07-10
US20080165569A1
Physics

Resistance Limited Phase Change Memory Material

#13 | 2008-05-29
US20080124833A1
Electricity

METHOD FOR FILLING HOLES WITH METAL CHALCOGENIDE MATERIAL

#14 | 2008-02-21
US20080042167A1
Physics

Phase change materials and associated memory devices

#15 | 2007-11-15
US20070264504A1
Electricity

Solution-based deposition process for metal chalcogenides

#16 | 2006-12-14
US20060279978A1
Physics

Method and structure for high performance phase change memory

#17 | 2006-10-12
US20060226409A1
Electricity

Structure for confining the switching current in phase memory (PCM) cells

#18 | 2005-10-13
US20050227177A1
Physics

Phase-change memory cell and method of fabricating the phase-change memory cell

#19 | 2005-08-04
US20050167656A1
Physics

Phase-change memory cell and method of fabricating the phase-change memory cell

InventorID:

3646982 ⎘