Tab A. Stephens

Semiconductor device with selectively modulated gate work function

Method of forming a finFET and structure

Method of forming a via

Method to improve source/drain parasitics in vertical devices

Method to selectively modulate gate work function through selective Ge condensation and high-K dielectric layer

Electronic device including a semiconductor fin having a plurality of gate electrodes and a process for forming the electronic device

Semiconductor structure pattern formation

Undoped gate poly integration for improved gate patterning and cobalt silicide extendibility

Poly pre-doping anneals for improved gate profiles

FinFET structure with contacts