Inventor profile of:

BRUCE M. GREEN

City:

Gilbert, Arizona

Country:

United States

Published Applications:

36

Last publication date:

2017-11-02

Top Assignees for applications by BRUCE M. GREEN

The entities that hold a legal rights for patent applications filed by inventor GREEN BRUCE M.:

Recent patent applications by GREEN BRUCE M.

BRUCE M. GREEN from Gilbert, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2017-11-02
US20170317202A1
Electricity

Semiconductor device with selectively etched surface passivation

#2 | 2017-10-12
US20170294531A1
Electricity

Semiconductor device with a recessed ohmic contact and methods of fabrication

#3 | 2017-09-07
US20170257091A1
Electricity

Devices with signal and temperature characteristic dependent control circuitry and methods of operation therefor

#4 | 2017-08-17
US20170236929A1
Electricity

Semiconductor device with selectively etched surface passivation

#5 | 2017-07-20
US20170207142A1
Electricity

Semiconductor devices with a thermally conductive layer and methods of their fabrication

#6 | 2016-12-29
US20160380626A1
Electricity

Devices with signal characteristic dependent control circuitry and methods of operation therefor

#7 | 2016-11-24
US20160343809A1
Electricity

Device with a conductive feature formed over a cavity and method therefor

#8 | 2016-10-20
US20160308010A1
Electricity

Semiconductor devices with a thermally conductive layer

#9 | 2015-12-31
US20150381163A1
Electricity

Devices with signal characteristic dependent control circuitry and methods of operation therefor

#10 | 2015-12-10
US20150357452A1
Electricity

Semiconductor device with selectively etched surface passivation

#11 | 2015-10-15
US20150295075A1
Electricity

High speed gallium nitride transistor devices

#12 | 2015-10-15
US20150294921A1
Electricity

Semiconductor devices with a thermally conductive layer and methods of their fabrication

#13 | 2015-05-21
US20150137135A1
Electricity

Semiconductor devices with integrated Schottky diodes and methods of fabrication

#14 | 2015-05-14
US20150132932A1
Electricity

Semiconductor device with selectively etched surface passivation

#15 | 2015-05-07
US20150123168A1
Electricity

MISHFET and Schottky device integration

#16 | 2014-08-28
US20140239346A1
Electricity

MISHFET and Schottky device integration

#17 | 2014-03-27
US20140087550A1
Electricity

Methods of making semiconductor devices with low leakage Schottky contacts

#18 | 2014-03-06
US20140061659A1
Electricity

GaN dual field plate device with single field plate metal

#19 | 2013-12-26
US20130341679A1
Electricity

Semiconductor device with selectively etched surface passivation

#20 | 2013-12-26
US20130341678A1
Electricity

Semiconductor device with selectively etched surface passivation

#21 | 2013-10-24
US20130277680A1
Electricity

High speed gallium nitride transistor devices

#22 | 2013-06-20
US20130157456A1
Electricity

Methods relating to the fabrication of devices having conductive substrate vias with catch-pad etch-stops

#23 | 2013-04-18
US20130092947A1
Electricity

Semiconductor device and method of making

#24 | 2013-01-17
US20130015462A1
Electricity

Transistors with dual layer passivation

#25 | 2012-07-12
US20120175777A1
Electricity

Device having conductive substrate via with catch-pad etch-stop

#26 | 2012-06-21
US20120156843A1
Electricity

DIELECTRIC LAYER FOR GALLIUM NITRIDE TRANSISTOR

#27 | 2011-06-30
US20110156051A1
Electricity

Semiconductor devices with low leakage Schottky contacts

#28 | 2010-11-25
US20100295100A1
Electricity

Integrated circuit having a bulk acoustic wave device and a transistor

#29 | 2009-11-24
US9858337
-

Method of forming an AlN coated heterojunction field effect transistor

#30 | 2009-06-11
US20090146191A1
Electricity

Method for forming semiconductor devices with low leakage Schottky contacts

#31 | 2007-10-18
US20070241419A1
Electricity

Transistor and method with dual layer passivation

#32 | 2007-08-07
US10209746
-

Field plate transistor with reduced field plate resistance

#33 | 2006-10-05
US20060220062A1
Electricity

pHEMT with barrier optimized for low temperature operation

#34 | 2006-03-02
US20060043416A1
Electricity

Recessed semiconductor device

#35 | 2005-05-19
US20050104087A1
Electricity

InGaP pHEMT device for power amplifier operation over wide temperature range

#36 | 2005-03-15
US10716955
-

Method for forming a microwave field effect transistor with high operating voltage

InventorID:

36667 ⎘